AVS 46th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM1-ThM

Invited Paper EM1-ThM8
Fluroinated Amorphous Carbon - A Low Dielectric Constant Material for Multilevel Interconnect Applications

Thursday, October 28, 1999, 10:40 am, Room 608

Session: Cu, Low-k Dielectrics and Interfaces
Presenter: W. Zhu, Lucent Technologies
Authors: W. Zhu, Lucent Technologies
C.S. Pai, Lucent Technologies
H.E. Bair, Lucent Technologies
H.W. Krautter, Lucent Technologies
B.S. Dennis, Lucent Technologies
Correspondent: Click to Email
Low dielectric constant (k) materials are key components for the next generation backend-of-the-line interconnect architectures. We investigated the fundamental relationships among the deposition, structure and properties of low k fluorinated amorphous carbon (a-C:F) films. We found that the useful low k a-C:F films need to possess a carbon structure with an optimal amount of crosslinked, sp3 bonded carbon atoms. This dictates that the F/C atomic ratio is in a narrow range of 35-45%, and the films contain no hydrogen. We have successfully deposited robust a-C:F films with k<2.8 and with physical properties meeting stringent requirements for device integration.