| AVS 46th International Symposium | |
| Electronic Materials and Processing Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | EM1-ThA1 Surface Chemical Changes during Cu Chemical Mechanical Polishing S. Seal, D. Tamboli, V. Desai, University of Central Florida, S. Joshi, G. Shinn, Texas Instruments |
| 2:20pm | EM1-ThA2 Effect of Thin Film Properties on Copper Removal in CMP D. Tamboli, S. Seal, V. Desai, University of Central Florida, S. Joshi, G. Shinn, Texas Instruments |
| 2:40pm | EM1-ThA3 Invited Paper Damascene Patterning of Advanced Interconnect Structures R.J. Gutmann, Rensselaer Polytechnic Institute |
| 3:20pm | EM1-ThA5 Tungsten CMP Process Post Tungsten Etch Back Process to Improve the Reliability for Sub-Micron Device Technology A. Sidhwa, H. Minssieux, C. Spinner, STMicroelectronics, Inc. |
| 3:40pm | EM1-ThA6 Integrated Dry Cleaning after Oxide Etching in Fluorocarbon Gases O. Kwon, Y.-P. Han, H.H. Sawin, Massachusetts Institute of Technology |
| 4:20pm | EM1-ThA8 Etching and Cleaning of Silicon Wafers using HF Vapor Process in the Monolayer Etching Regime Y.-P. Han, H.H. Sawin, Massachusetts Institute of Technology |
| 4:40pm | EM1-ThA9 Chlorosilane Treatment of SiO@sub 2@-Covered Si Surfaces for Modification of their Chemical Reactivity in Si CVD T. Yasuda, M. Nishizawa, S. Yamasaki, Joint Research Center for Atom Technology (JRCAT), Japan |
| 5:00pm | EM1-ThA10 The Passivation of Si(100)-2x1 with Alcohols T. Bitzer, A. Lopez, N.V. Richardson, St. Andrews University, United Kingdom |