AVS 46th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM1-ThA

Paper EM1-ThA1
Surface Chemical Changes during Cu Chemical Mechanical Polishing

Thursday, October 28, 1999, 2:00 pm, Room 608

Session: Chemical Mechanical Planarization
Presenter: S. Seal, University of Central Florida
Authors: S. Seal, University of Central Florida
D. Tamboli, University of Central Florida
V. Desai, University of Central Florida
S. Joshi, Texas Instruments
G. Shinn, Texas Instruments
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The current USLI manufacturing technology is continued to be driven towards miniaturization of integrated circuits (< 0.1 micron feature size). As the devices and circuits have increased their complexity, densification and miniaturization, CMP has emerged to be the key technology for feature sizes of 0.35 micron and below to meet the stringent requirements for next generation microelectronic devices. Cu CMP@footnote 1@ is the "technology" for producing submicron Cu line in multilevel metallization structures and satisfies the global planarization, the most important issue for lithography. During Cu CMP, oxidation, dissolution and surface modification take place due to slurry/wafer interaction. While electrochemical measurements are performed to determine corrosion rate, degree of surface passivation and dissolution, detailed surface chemistry is carried out using XPS and AES techniques. Special emphasis is focused on monitoring changes in copper oxide/hydroxides stoichiometry. The surface chemical changes are correlated to Cu polishing rate and slurry chemistry @FootnoteText@ @footnote 1@J. M. Steigerwald, S. P. Muraraka and R. J. Gutmann, Chemical Mechanical planarization of Microelectronic Materials, John Wiley and Sons, Inc. 1997.