AVS 46th International Symposium
    Electronic Materials and Processing Division Thursday Sessions
       Session EM1-ThA

Paper EM1-ThA2
Effect of Thin Film Properties on Copper Removal in CMP

Thursday, October 28, 1999, 2:20 pm, Room 608

Session: Chemical Mechanical Planarization
Presenter: D. Tamboli, University of Central Florida
Authors: D. Tamboli, University of Central Florida
S. Seal, University of Central Florida
V. Desai, University of Central Florida
S. Joshi, Texas Instruments
G. Shinn, Texas Instruments
Correspondent: Click to Email
Currently there is a significant efforts directed towards integrating copper interconnect technology into semiconductor device fabrication because of advantages such as lower RC delays and superior electromigration performance with the use of copper. CMP of copper is a relatively new technology. It is also extremely challenging because of low hardness of Cu films (which makes it prone to defects such as scratches, dishing etc.) and its poor electrochemical properties. Performance of Cu-CMP process is greatly dependent on properties of the deposited copper films. In this study, we report the effect of thin film properties on CMP performance of Cu. As deposited Cu films are first characterized using techniques such as XPS, glancing angle XRD (to measure internal stress), AFM (to study grain morphology), nano-indentation and 4-probe sheet resistivity measurement, and electrochemical polarization measurements. These wafers are then polished. CMP performance as measured by removal rates and in-situ dissolution rate measurements is then correlated with the thin film properties of Cu.