| 2:00pm |
EM-TuA1 Invited Paper
Challenges in Gate Dielectric Scaling
D.P. Monroe, B.E. Weir, M.A. Alam, J. Bude, P.J Silverman, T. Sorsch, M.L. Green, A. Ghetti, Y. Ma, Y. Chen, F. Li, Bell Labs, Lucent Technologies |
| 2:40pm |
EM-TuA3
Investigation of Titanium Nitride Gates for Tantalum Pentoxide and Titanium Dioxide Dielectrics
D.C. Gilmer, C.C. Hobbs, L. La, B. Adetutu, J. Conner, M. Tiner, L. Prabhu, S. Bagchi, P. Tobin, Motorola |
| 3:00pm |
EM-TuA4
Separate and Independent Reductions in Direct Tunneling in Oxide/Nitride Stacks with Monolayer Interface Nitridation Associated with the i) Interface Nitridation and ii) Increased Physical Thickness
Y. Wu, H. Niimi, H. Yang, G. Lucovsky, North Carolina State University |
| 3:20pm |
EM-TuA5 Invited Paper
High K Gate Dielectrics for Sub-100nm CMOS
D.L. Kwong, University of Texas, Austin |
| 4:00pm |
EM-TuA7
Evidence of Aluminum Silicate Formation at the Al@sub2@O@sub3@/Si Interface for Thermal and Plasma Enhanced Chemical Vapor Deposited Al@sub2@O@sub3@ Thin Films
D. Niu, T.M. Klein, G.N. Parsons, North Carolina State University |
| 4:20pm |
EM-TuA8
Thermally Grown Gate Insulators for Heterostructure p-MOSFETs
D.W. Greve, A.C. Mocuta, Carnegie Mellon University |
| 4:40pm |
EM-TuA9
Deposition of ZrO@sub 2@/SiO@sub 2@ Alloys by 300° Remote Plasma Processing for Alternative High-K Gate Dielectrics in Aggressively Scaled CMOS Devices
R. Therrien, B. Raynor, D. Wolfe, G. Lucovsky, North Carolina State University |