| 2:00pm |
PS-WeA1
Surface Reactions and Hydrogen Coverage on Plasma Deposited Hydrogenated Amorphous Silicon and Nanocrystalline Silicon Surfaces
D.C. Marra, S. Ramalingam, E. Edelberg, D. Maroudas, E.S. Aydil, University of California, Santa Barbara |
| 2:20pm |
PS-WeA2
Gas Phase and Surface Kinetics in Plasma Enhanced Deposition of Silicon Nitride: Effect of Gas Dilution on Electron Energy Distribution, Radical Generation, and Film Composition
T.M. Klein, C.S. Yang, A.I. Chowdhury, G.N. Parsons, North Carolina State University |
| 2:40pm |
PS-WeA3
Atomistic Simulation of Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films
S. Ramalingam, D. Maroudas, E.S. Aydil, University of California, Santa Barbara |
| 3:00pm |
PS-WeA4
The Ion-assisted Etching and Profile Development of Silicon in Molecular and Atomic Chlorine: Experiment, Modeling, and Simulation
J.A. Levinson, E.S.G. Shaqfeh, Stanford University, M. Balooch, A.V. Hamza, Lawrence Livermore National Laboratory |
| 3:20pm |
PS-WeA5
The Role of Etching Products on the Chemical Composition and Thickness of the Chlorinated Surface Layer That Forms During Etching of Silicon in a Chlorine Plasma
K.H.A. Bogart, V.M. Donnelly, Bell Laboratories, Lucent Technologies |
| 3:40pm |
PS-WeA6
Reactive Ion Etching of Si by Cl, Cl@sub 2@, and Ar Ions: Molecular Dynamics Simulations with Comparisons to Experiment
D.E. Hanson, J.D. Kress, A.F. Voter, Los Alamos National Laboratory |
| 4:00pm |
PS-WeA7
Investigation of Si-poly Etch Process for 0.1 µm Gate Patterning and Beyond
L. Vallier, L. Desvoivres, M. Bonvalot, O. Joubert, France Telecom-CNET, S. Tedesco, B. Dal’Zotto, CEA-LETI, France |
| 4:20pm |
PS-WeA8
Mechansims in High Aspect Ratio Oxide Feature Etching using Inductively Coupled Fluorocarbon Plasmas
M. Schaepkens, G.S. Oehrlein, State University of New York, Albany, K.G. Donohoe, Micron Technology, Inc., J.M. Cook, Lam Research Corporation |
| 4:40pm |
PS-WeA9
Surface Reactivity of CF and CF@sub 2@ Radicals Measured Using Laser-Induced Fluorescence and CHF@sub 3@ Plasma Molecular Beams
N.E. Capps, N.M. Mackie, E.R. Fisher, Colorado State University |
| 5:00pm |
PS-WeA10
Optical Monitoring of Surface Adlayers by Laser-induced Thermal Desorption during Plasma Etching of Si and Ge
J.Y. Choe, I.P. Herman, Columbia University, V.M. Donnelly, Bell Laboratories, Lucent Technologies |