AVS 45th International Symposium
    Plasma Science and Technology Division Wednesday Sessions
       Session PS-WeA

Paper PS-WeA9
Surface Reactivity of CF and CF@sub 2@ Radicals Measured Using Laser-Induced Fluorescence and CHF@sub 3@ Plasma Molecular Beams

Wednesday, November 4, 1998, 4:40 pm, Room 318/319/320

Session: Plasma-Surface Interactions I
Presenter: N.E. Capps, Colorado State University
Authors: N.E. Capps, Colorado State University
N.M. Mackie, Colorado State University
E.R. Fisher, Colorado State University
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Fluorocarbon discharges have been widely studied because of their ability to promote etching of a variety of substrates and to deposit a wide range of fluorinated polymeric films. CF and CF@sub 2@ radicals are important species in fluorocarbon pla smas and are postulated to contribute both to plasma polymerization and to selective etching of Si and SiO@sub 2@. The surface reactivity of CF and CF@sub 2@ radicals during the plasma processing of a variety of substrates using the Imaging of Radicals I nteracting with Surfaces (IRIS) technique is reported. IRIS combines spatially-resolved laser-induced fluorescence with molecular beam and plasma techniques. The molecular beam source is a 100% CHF@sub 3@ plasma, and we have investigated the surface rea ctivity of CF and CF@sub 2@ with silicon. silicon dioxide, silicon nitride, 304 stainless steel, and system 8 photoresist. Surface reactivity measurements were determined under a range of plasma powers, with ambient and heated surfaces, as well as under low and high ion bombardment conditions. On all surfaces we see generation of CF@sub 2@ radicals whereas CF radicals are consumed at the surface under similar plasma conditions. Mechanisms for film formation and for the surface production of CF@sub 2@ will be discussed