| AVS 45th International Symposium | |
| Manufacturing Science and Technology Group | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | MS-TuA1 Invited Paper Pattern/Etch/Clean Process Interactions for 0.18um CMOS Gate Formation R.J. Gale, R. Kraft, R.T. Laaksonen, A.L.P. Rotondaro, Texas Instruments |
| 2:40pm | MS-TuA3 Dual Damascene : Etching Process Characterisation of "Self Aligned" and "Counter Bore" Architectures P. Berruyer, F. Vinet, LETI-GRESSI, France, H. Feldis, SGS-Thomson, France, E. Tabouret, Y. Trouillet, LETI-GRESSI, France, Y. Morand, SGS-Thomson, France |
| 3:00pm | MS-TuA4 Low k Polymer Etching for Dual Damascene Technology Application to SILK Material F. Vinet, E. Tabouret, LETI-GRESSI, France, Ch. Vivensang, Tokyo Electron Europe LTD, France |
| 3:20pm | MS-TuA5 Invited Paper Manufacturing Issues for MEMS Production K.W. Markus, MCNC |
| 4:00pm | MS-TuA7 Design of a 300 mm CVD Tungsten Reactor using Computational Fluid Dynamics E.J. McInerney, T.M. Pratt, A. Tahari, Novellus Systems |
| 4:20pm | MS-TuA8 Computational Flow Modeling for Electrostatic Chuck Applications L.A. Gochberg, Novellus Systems, Inc. |
| 4:40pm | MS-TuA9 TEOS CVD Topography Simulation Using Surface CHEMKIN and EVOLVE A.H. Labun, Digital Equipment Corporation, T.S. Cale, Rensselaer Polytechnic Institute, P. Ho, H.K. Moffat, M.E. Coltrin, Sandia National Laboratories |
| 5:00pm | MS-TuA10 Plasma-Induced Nitridation of the Gate Oxide Dielectrics: Linked Equipment-Feature-Atomic Scale Simulations V. Sukharev, S. Aronowitz, H. Puchner, V. Zubkov, J. Haywood, J. Kimball, LSI Logic Corporation |