| AVS 64th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS+NS+SS+TF-FrM1 Quasi-Atomic Layer Etching of Silicon Nitride with Independent Control of Directionality and Selectivity Sonam Sherpa, P.L.G. Ventzek, A. Ranjan, Tokyo Electron Limited |
| 8:40am | PS+NS+SS+TF-FrM2 WO3 and W Thermal Atomic Layer Etching Using “Conversion-Fluorination” and “Oxidation-Conversion-Fluorination” Etching Mechanisms Nicholas Johnson, S.M. George, University of Colorado at Boulder |
| 9:00am | PS+NS+SS+TF-FrM3 Invited Paper Solving the Grand Challenges of Plasma Etch with Concurrent Engineering Mingmei Wang, TEL Technology Center, America, LLC, P.L.G. Ventzek, A. Ranjan, Tokyo Electron Limited |
| 9:40am | PS+NS+SS+TF-FrM5 Effect of Non-Uniform Polymer Deposition on the Atomic Layer Etching of 3D Features in SiO2 Chad Huard, University of Michigan, Y. Zhang, S. Sriraman, A. Paterson, Lam Research Corporation, M.J. Kushner, University of Michigan |
| 10:00am | PS+NS+SS+TF-FrM6 Etching with Low Te Plasmas Scott Walton, D.R. Boris, S.C. Hernández, Naval Research Laboratory, S.G. Rosenberg, ASEE Postdoctoral Fellow, NRL, H. Miyazoe, A.V. Jagtiani, S.U. Engelmann, E.A. Joseph, IBM T.J. Watson Research Center |
| 10:20am | PS+NS+SS+TF-FrM7 Thermal Atomic Layer Etching of Titanium Nitride Using Sequential, Self-Limiting Oxidation and Fluorination Reactions Younghee Lee, S.M. George, University of Colorado at Boulder |
| 10:40am | PS+NS+SS+TF-FrM8 Atomistic Simulations of H2 Plasma Modification of SiN Thin-Films for Advanced Etch Processes Vahagn Martirosyan, E. Despiau-Pujo, O. Joubert, LTM, Univ. Grenoble Alpes, CEA-LETI, France |
| 11:00am | PS+NS+SS+TF-FrM9 Defectless Nanostructure Patterning of Germanium Using Neutral Beam Etching for Ge FinFET Devices Shuichi Noda, Tohoku University, Japan, W. Mizubayashi, K. Endo, AIST, Japan, S. Samukawa, Tohoku Univeversity, AIST, Japan |
| 11:20am | PS+NS+SS+TF-FrM10 Thermally-Driven Atomic Layer Etching of Metallic Tungsten Films Using O2 and WF6 Wenyi Xie, P.C. Lemaire, G.N. Parsons, North Carolina State University |