| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | EM+NS-ThA1 Synthesis of β-Ga2O3 Thin Films on SiC by Molecular Beam Epitaxy Neeraj Nepal, D.S. Katzer, D.F. Storm, M.T. Hardy, B.P. Downey, D.J. Meyer, U.S. Naval Research Laboratory |
| 2:40pm | EM+NS-ThA2 Growth and Characterization of α-, β-, and ε-Ga2O3 Epitaxial Layers Lisa Porter, Y. Yao, L.A.M. Lyle, Carnegie Mellon University, S. Okur, G.S. Tompa, T. Salagaj, N. Sbrockey, Structured Materials Industries, Inc. |
| 3:00pm | EM+NS-ThA3 Invited Paper Ultra-wide-bandgap Ga2O3 Material and Electronic Device Technologies Masataka Higashiwaki, M.H. Wong, National Institute of Information and Communications Technology, Japan, K. Konishi, Tokyo University of Agriculture and Technology, Japan, Y. Nakata, T. Kamimura, National Institute of Information and Communications Technology, Japan, K. Sasaki, K. Goto, Tamura Corporation, Japan, A. Takeyama, T. Makino, T. Ohshima, National Institutes for Quantum and Radiological Science and Technology, Japan, H. Murakami, Y. Kumagai, Tokyo University of Agriculture and Technology, Japan, A. Kuramata, S. Yamakoshi, Tamura Corporation, Japan |
| 4:00pm | EM+NS-ThA6 Reactive Magnetron Sputtering of Titanium Nitride and Titanium Aluminum Nitride on Lithium Niobate for Electronic and Opto-Electronic Applications Amber Reed, H.A. Smith, D.C. Abeysinghe, P.J. Shah, L. Grazulis, M.J. Hill, M.E. McConney, B.M. Howe, A.M. Urbas, Air Force Research Laboratory |
| 4:20pm | EM+NS-ThA7 Growth and Property Analysis of Doped GaN-GaAlN Heterostructures on Low- and High-temperature AlN/Sapphire Templates Nikolaus Dietz, B.G. Cross, M. Vernon, Georgia State University, R. Collazo, R. Kirste, S. Mita, Z. Sitar, North Carolina State University |
| 4:40pm | EM+NS-ThA8 Invited Paper A Thermodynamic Supersaturation model for the Growth of AlGaN by MOCVD Ramón Collazo, S. Washiyama, I. Bryan, North Carolina State University, P. Reddy, S. Mita, Adroit Materials Inc., Z. Sitar, North Carolina State University |
| 5:20pm | EM+NS-ThA10 Anomalous Hall Effect in MOCVD-grown Gadolinium-doped Gallium Nitride V.G. Saravade, P. Patel, C. Ferguson, K. Yunghans, A. Ghods, C. Zhou, Ian Ferguson, Missouri University of Science and Technology |
| 5:40pm | EM+NS-ThA11 Valence and Conduction Band Offsets of Al2O3, LaAl2O3, AZO and ITO with Ga2O3 Patrick Carey IV, F. Ren, D. Hays, B. Gila, S.J. Pearton, University of Florida, S. Jang, Dankook University, South Korea, A. Kuramata, Tamura Corporation, Japan |
| 6:00pm | EM+NS-ThA12 In Situ Plasma Emission Spectroscopy of InN/GaN Heterostructures Grown by MEPA-MOCVD Daniel Seidlitz, B.G. Cross, Y. Abate, Georgia State University, A. Hoffmann, Technical University of Berlin, Germany, N. Dietz, Georgia State University |