| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM+NS-ThA |
| Session: | Wide and Ultra-wide Band Gap Materials for Electronic Devices: Growth, Modeling, and Properties |
| Presenter: | Ian Ferguson, Missouri University of Science and Technology |
| Authors: | V.G. Saravade, Missouri University of Science and Technology P. Patel, Missouri University of Science and Technology C. Ferguson, Missouri University of Science and Technology K. Yunghans, Missouri University of Science and Technology A. Ghods, Missouri University of Science and Technology C. Zhou, Missouri University of Science and Technology I.T. Ferguson, Missouri University of Science and Technology |
| Correspondent: | Click to Email |
Dilute Magnetic Semiconductor (DMS) materials for spintronics applications have the potential to reduce power consumption while increasing the processing speed, integration densities and non-volatile memory, compared to the conventional semiconductor devices. While Gd-doped GaN has exhibited room temperature (RT) ferromagnetism, the Anomalous Hall Effect (AHE) has not been reported in relation to the observed magnetic properties [1, 2].
In this work, we study the AHE in MOCVD-grown Gd-doped GaN with different Gd concentrations and precursors, and investigate their magnetic properties. RT AHE along with XRD helps in determining the mechanisms responsible for the observed ferromagnetism. Our preliminary measurements showed residual Rxy/Rxx up to 10 and residual coercive field up to 50 Oe. These hysteresis curves can be caused by the ferromagnetic properties of MOCVD-grown Gd-doped GaN. Additionally, GaN (002) peak had been identified in the initial Ω-2θ XRD scans. XRD rocking curve scans with varying Ω will be performed to study, the defects that are induced by doping GaN with Gd, and their potential contribution towards ferromagnetism. AHE and XRD results of Gd-doped GaN will be compared to those of un-doped GaN to verify that the ferromagnetism is caused by Gd doping. Furthermore, the effect of temperature on the magnetic behavior of Gd-doped GaN will be analyzed using variable temperature AHE.
To our knowledge, we are the first to report the AHE in MOCVD-grown Gd-doped GaN. We consider this work to contribute towards the investigation of DMS for RT ferromagnetism and further for spintronics applications.
References
1. S. Gupta, Z. Tahir, A. Melton, E. Malguth, H. Yu, Z. Liu, X. Liu, J. Schwartz, and I. Ferguson, Journal of Applied Physics, 110 (8), 083920 (2011).
2. S. Shvarkov, A. Ludwig, A. Wieck, Y. Cordier, A. Ney, H. Hardtdegen, A. Haab, A. Trampert, R. Ranchal, J. Herfort, H. Becker, D. Rogalla, and D. Reuter, physica status solidi (b), 251 (9), p. 1673 (2014).