| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM+NS-ThA |
| Session: | Wide and Ultra-wide Band Gap Materials for Electronic Devices: Growth, Modeling, and Properties |
| Presenter: | Nikolaus Dietz, Georgia State University |
| Authors: | N. Dietz, Georgia State University B.G. Cross, Georgia State University M. Vernon, Georgia State University R. Collazo, North Carolina State University R. Kirste, North Carolina State University S. Mita, North Carolina State University Z. Sitar, North Carolina State University |
| Correspondent: | Click to Email |
The developing of radiation-hard UV solid state avalanche photodiodes (APD’s) based on group III-Nitride wide band gap materials have a wide application area from solar blind detector to wavelength specific PMT based detector devices that can be tuned in the 220 nm to 450 nm wavelength range, tailored to specific scintillators of interest. This contribution focuses on closely lattice-matched, high-quality GaN a substrate technologies using metalorganic chemical vapor deposition (MOCVD) technique, which provide sufficient high-quality AlGaN layers and heterostructures with high phase uniformity and low dislocation density for low leakage currents, to enable avalanche mechanisms, low leakage currents, high performance characteristics and reliability of the devices.
We will present results on the growth and doping of GaN/GaAlN heterostructures deposited on low- and high-temperature AlN/Sapphire template structures, using a customized D125 Veeco MOCVD reactor system. The structural quality of the initial GaN layer grown on various AlN-/GaN-sapphire template structure has been analyzed and is accessed regarding its resulting dislocation and defect densities, using XRD, Raman and FTIR spectroscopy. The influence of Silicon n-doping in GaN and Ga0.9Al0.1N epilayers on the defect density was analyzed XRD and the dopant incorporation by SIMS analysis.