| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM+NS-ThA |
| Session: | Wide and Ultra-wide Band Gap Materials for Electronic Devices: Growth, Modeling, and Properties |
| Presenter: | Neeraj Nepal, U.S. Naval Research Laboratory |
| Authors: | N. Nepal, U.S. Naval Research Laboratory D.S. Katzer, U.S. Naval Research Laboratory D.F. Storm, U.S. Naval Research Laboratory M.T. Hardy, U.S. Naval Research Laboratory B.P. Downey, U.S. Naval Research Laboratory D.J. Meyer, U.S. Naval Research Laboratory |
| Correspondent: | Click to Email |
Recently, there has been great interest in β-Ga2O3 as a next generation ultra-wide bandgap semiconductor (UWBGS) for high-power/temperature electronics devices. However, it has low thermal conductivity of β-Ga2O3 may limit device performance. One strategy to improve performance of Ga2O3 based devices is through heterostructure design on high thermal conductivity substrate. In this paper, we report growth and characterization of 100 nm thick β-Ga2O3 on SiC by molecular beam epitaxy (MBE) at 650 °C. First, the growth parameter space such thermocouple measured growth temperature, relative Ga flux, and oxygen plasma were varied to grow β-Ga2O3 films on c-plane sapphire substrates. For an O2 plasma flow of 1 sccm (2.5x10-5 torr) X-ray diffraction shows weak facets of β-Ga2O3 appear regardless of the Ga flux and temperature, however for <0.6 sccm O2 flow, smooth β-Ga2O3 [ (-201)||(0001)] grows on c-plane sapphire. Optimized MBE growth conditions on sapphire substrate were used to grow β-Ga2O3 on SiC. Single phase MBE β-Ga2O3 film on SiC grown at 650 °C are insulating, have rocking curve full-width-at-half-maximum of 720 arc-sec with root mean square surface roughness of less than 2 nm. In this paper we will discuss MBE growth parameter space of β-Ga2O3 on sapphire and the structural, morphological, and electrical properties of MBE grown β-Ga2O3 thin films on SiC.