| AVS 64th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Thursday Sessions |
| Session EM+NS-ThA |
| Session: | Wide and Ultra-wide Band Gap Materials for Electronic Devices: Growth, Modeling, and Properties |
| Presenter: | Masataka Higashiwaki, National Institute of Information and Communications Technology, Japan |
| Authors: | M. Higashiwaki, National Institute of Information and Communications Technology, Japan M.H. Wong, National Institute of Information and Communications Technology, Japan K. Konishi, Tokyo University of Agriculture and Technology, Japan Y. Nakata, National Institute of Information and Communications Technology, Japan T. Kamimura, National Institute of Information and Communications Technology, Japan K. Sasaki, Tamura Corporation, Japan K. Goto, Tamura Corporation, Japan A. Takeyama, National Institutes for Quantum and Radiological Science and Technology, Japan T. Makino, National Institutes for Quantum and Radiological Science and Technology, Japan T. Ohshima, National Institutes for Quantum and Radiological Science and Technology, Japan H. Murakami, Tokyo University of Agriculture and Technology, Japan Y. Kumagai, Tokyo University of Agriculture and Technology, Japan A. Kuramata, Tamura Corporation, Japan S. Yamakoshi, Tamura Corporation, Japan |
| Correspondent: | Click to Email |
Recently, gallium oxide (Ga2O3) has attracted much attention as a candidate for future power and harsh environment electronics due to its extremely large bandgap of 4.5 eV and the availability of economical melt-grown native substrates. In this talk, following a short introduction of the material properties of Ga2O3, we will discuss our recent progress in the development of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs), including Ga2O3 thin-film epitaxial growth technologies by molecular beam epitaxy (MBE) and halide vapor phase epitaxy (HVPE).
State-of-the-art Ga2O3 MOSFETs with a gate-connected field plate (FP) were fabricated using MBE-grown Ga2O3 homoepitaxial layers. The devices showed excellent room-temperature (RT) characteristics such as a record high off-state breakdown voltage (Vbr) of 755 V, a large drain current on/off ratio of over nine orders of magnitude, and DC-RF dispersion-free output characteristics [1]. Furthermore, the MOSFETs demonstrated strong prospects of Ga2O3 devices for extreme environment electronics by virtue of their stable high-temperature operation up to 300°C and strong radiation hardness against gamma-ray irradiation [2].
We have also fabricated and characterized Ga2O3 FP-SBDs on n--Ga2O3 drift layers grown by HVPE [3-5]. The illustrative device with a net donor concentration of 1.8×1016 cm-3 exhibited a specific on-resistance of 5.1 mΩ·cm2 and an ideality factor of 1.05 at RT. Successful FP engineering resulted in a high Vbr of 1076 V. Note that this was the first demonstration of Vbr of over 1 kV in any Ga2O3 power device. The maximum electric field in the Ga2O3 drift layer at the condition of destructive breakdown was estimated to be 5.1 MV/cm by device simulation, which is about two times larger than the theoretical limits for SiC and GaN.
This work was partially supported by Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), “Next-generation power electronics” (funding agency: NEDO).
[1] M. H. Wong et al., IEEE Electron Device Lett. 37, 212 (2016), [2] M. H. Wong et al., Proc. 75th Device Research Conference II-B.4, 2017, [3] K. Konishi et al., Appl. Phys. Lett. 110, 103506 (2017), [4] K. Nomura et al., J. Cryst. Growth 405, 19 (2014), [5] H. Murakami et al., Appl. Phys. Express 8, 015503 (2015).