| AVS 64th International Symposium & Exhibition | |
| 2D Materials Focus Topic | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | 2D+EM+MN+NS-WeA1 Capacitance-voltage Characteristics of Graphene-gate MOS Devices: The Effect of Graphene Quantum Capacitance Ruixue Lian, A. Ural, University of Florida |
| 2:40pm | 2D+EM+MN+NS-WeA2 in-situ Electrical Characterization of Surface Functionalization and Gate Dielectric Deposition Processes on 2D Transition Metal Dichalcogenides Transistors Antonio T. Lucero, J.B. Lee, L. Cheng, H.S. Kim, S.J. Kim, J. Kim, University of Texas at Dallas |
| 3:00pm | 2D+EM+MN+NS-WeA3 High-K Gate oxide by Low Temperature ALD Technique for 2D Materials and Inert Metal Surfaces Il Jo Kwak, J.H. Park, University of California at San Diego, S. Fathipour, A. Seabaugh, University of Notre Dame, C.S. Pang, Z. Chen, Purdue University, A.C. Kummel, University of California at San Diego |
| 3:20pm | 2D+EM+MN+NS-WeA4 Exploration and Comparison of Optoelectronic Properties of MoS2 Monolayers with Multilayer Flakes and MoxW1-xS2 Ternary Compounds Sourav Garg, J. Waters, A. Mollah, S. Kim, P. Kung, University of Alabama |
| 4:40pm | 2D+EM+MN+NS-WeA8 Dielectric Properties of Carbon Nanomembranes prepared from aromatic Self-Assembled Monolayers investigated by Impedance Spectroscopy Paul Penner, E. Marschewski, X. Zhang, Bielefeld University, Germany, T. Weimann, P. Hinze, Physikalisch-Technische Bundesanstalt, Germany, A. Beyer, A. Gölzhäuser, Bielefeld University, Germany |
| 5:00pm | 2D+EM+MN+NS-WeA9 Invited Paper 2D Crystals for Next-Generation Ultra Energy-Efficient Electronics Kaustav Banerjee, University of California at Santa Barbara |