AVS 64th International Symposium & Exhibition
    2D Materials Focus Topic Wednesday Sessions
       Session 2D+EM+MN+NS-WeA

Invited Paper 2D+EM+MN+NS-WeA9
2D Crystals for Next-Generation Ultra Energy-Efficient Electronics

Wednesday, November 1, 2017, 5:00 pm, Room 16

Session: 2D Device Physics and Applications
Presenter: Kaustav Banerjee, University of California at Santa Barbara
Correspondent: Click to Email
I will highlight the prospects of two-dimensional (2D) materials for innovating energy-efficient transistors, sensors, and interconnects targeted for next-generation electronics needed to support the emerging paradigm of the Internet of Things. More specifically, I will bring forward a few applications uniquely enabled by 2D materials and their heterostructures that have been demonstrated in my lab for realizing ultra-energy-efficient electronics. This will include the world’s first 2D-channel band-to-band tunneling transistor that overcomes a fundamental power consumption challenge in all electronic devices since the invention of the first transistor in 1947 (Nature 2015), as well as a breakthrough interconnect technology based on doped-graphene-nanoribbons, which overcomes the fundamental limitations of conventional metals and provides an attractive pathway toward a low-power and highly reliable interconnect technology for next-generation integrated circuits (Nano Letters 2016). I will also bring forward a new class of ultra-sensitive and low-power sensors as well as area-efficient and high-performance passive devices, both enabled by 2D materials, for ubiquitous sensing and connectivity to improve quality of life.