| AVS 60th International Symposium and Exhibition | |
| Plasma Science and Technology | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-TuP1 Dry Deep Etching of GaN Wide Band-gap Semiconductor N. Gosset, GREMI CNRS/Université d'Orléans, France, J. Ladroue, STMicroelectronics Tours SAS, France, T. Tillocher, P. Lefaucheux, GREMI CNRS/Université d'Orléans, France, M. Boufnichel, STMicroelectronics Tours SAS, France, R. Dussart, GREMI CNRS/Université d'Orléans, France |
| PS-TuP8 Fluorocarbon Films Deposited by c-C4F8/N2/Ar Plasmas: The Effect of N2-addition on Gas Phase Kinetics and Surface Chemistry P.K. Kao, National Taiwan University, Taiwan, Republic of China, P.J. Kuo, P.W. Chiou, C.C. Chou, Tokyo Electron Taiwan Limited, Taiwan, Republic of China, C.C. Hsu, National Taiwan University, Taiwan, Republic of China |
| PS-TuP11 Etching Characteristics of AlGaN and GaN in Inductively Coupled Cl2 Plasma J. Cao, Y. Lu, R. Kometani, J. Park, K. Ishikawa, K. Takeda, H. Kondo, M. Sekine, M. Hori, Nagoya University, Japan |
| PS-TuP12 Selection of Materials and Surface Finishes for Reduced Particle Formation Upon Ion Beam Bombardment in EUV Mask Blank Production Devices A.M. Lietz, D. Curreli, University of Illinois at Urbana Champaign, A.V. Hayes, A. Devashayam, Veeco, D.N. Ruzic, University of Illinois at Urbana Champaign |
| PS-TuP13 The Influence of Plasma and Vacuum Ultraviolet Radiation on the Time-Dependent Dielectric Breakdown of Porous Low-k Dielectric Films D. Pei, M. Nichols, H. Sinha, University of Wisconsin-Madison, S. Banna, Applied Materials Inc., Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
| PS-TuP14 Noninvasive, Real-Time Measurements of Plasma Parameters via Optical Emission Spectroscopy S. Wang, J.B. Boffard, C.C. Lin, A.E. Wendt, University of Wisconsin-Madison, S.B. Radovanov, H.M. Persing, Varian Semiconductor Equipment, Silicon Systems Group, Applied Materials Inc. |
| PS-TuP16 80 MHz Capacitively Coupled SiH4/H2 Discharge for m-Si Thin Film Depostion - 2 Dimensional Fluid Model Simulation H.B. Lin, S.E. Lien, C.H. Hsieh, K.C. Leou, National Tsing Hua University, Taiwan, Republic of China, C.C. Hsieh, C.F. Ai, Institute of Nuclear Energy Research, Taiwan, Republic of China |
| PS-TuP17 Numerical Investigation of Electron Heating in a Neutral-Loop Discharge Plasma S. Kim, University of Wisconsin-Madison, S. Banna, Applied Materials Inc., Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
| PS-TuP18 Hydrocarbon Conversion by Non-Equilibrium, Atmospheric-Pressure Microplasma J. Cole, R.M. Sankaran, Case Western Reserve University |
| PS-TuP19 Multi-Peaked and Stepped Electron Velocity Distributions in RF-DC Discharge with Secondary Emission A. Khrabrov, I.D. Kaganovich, Princeton Plasma Physics Laboratory, P. Ventzek, L. Chen, Tokyo Electron America |
| PS-TuP20 Formation of Multi-Peak Electron Velocity Distribution Function by Two-Stream Instability in a dc Discharge D. Sydorenko, University of Alberta, Canada, I.D. Kaganovich, A. Khrabrov, Princeton Plasma Physics Laboratory, L. Chen, P. Ventzek, Tokyo Electron America |
| PS-TuP21 Electron Molecule Collisions with Methane W.J. Brigg, University College London, UK, A.I. Williams, S. Lopez-Lopez, D. Monahan, Quantemol Ltd., UK, J.C. Tennyson, University College London, UK, A. Dzarasova, Quantemol Ltd., UK |
| PS-TuP22 A Comparative Study of New Algorithm for Fluid Simulation of High Density Plasma Discharges S.G. Oh, Y.J. Lee, J.H. Jeon, J.H. Seo, H. Choe, Korea Aerospace University, Republic of Korea |
| PS-TuP23 Properties of a Magnetic Neutral-Loop Discharge W. Li, S. Kim, K. Mavrakakis, Z. Ling, H. Zhang, J. Bray, T. Griffin, M. Nichols, University of Wisconsin-Madison, B.-H. Moon, Y.M. Sung, Kyungsung University, Korea, S. Banna, Applied Materials Inc., Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
| PS-TuP24 Size Effect of Hf Liquidous Nano-particles on PEPVD Growth of HfSiON on SiO2/ Si T. Haga, T. Kitajima, T. Nakano, National Defense Academy of Japan |
| PS-TuP26 High Etching Rate of Lithium Niobate Substrate using BCl3/Ar Mixture Gases by ICP-RIE C.M. Chang, P.L. Chen, J. Su, M.H. Shiao, C.-N. Hsiao, National Applied Research Laboratories, Taiwan, Republic of China |
| PS-TuP27 Direct Liquid Injection into Low-Pressure Plasmas D. Ogawa, Chubu University, Japan, M.J. Goeckner, L.J. Overzet, The University of Texas at Dallas |
| PS-TuP28 Role of Heterogenous Surface Reactions on the Evolution of O and N Atoms in N2/O2 Flowing Afterglows J. Pregent, L. Stafford, Université de Montréal, Canada |
| PS-TuP29 Synthesis of Small Organic Molecules from a CO2/CH4 Mixture by Dielectric Barrier Discharge (DBD): Gas Composition and Power Effect A. Ozkan, G. Arnoult, T. Bieber, P. De Keyser, F.A.B. Reniers, Université Libre de Bruxelles, Belgium |
| PS-TuP30 Mechanisms of Silicon Nitride (SiN) Etching by Hydrofluorocarbon (HFC) Plasmas K. Miyake, T. Ito, M. Isobe, K. Karahashi, Osaka University, Japan, M. Fukasawa, K. Nagahata, T. Tatsumi, Sony Corporation, Japan, S. Hamaguchi, Osaka University, Japan |
| PS-TuP31 Novel TSV Etching Technologies using Spatial and Temporal Control Plasma Y. Morikawa, T. Murayama, T. Sakuishi, K. Suu, NMEMS and ULVAC, Inc., Japan |
| PS-TuP32 State-Space Mapping of Plasma Tools via Coarse Mesh Tool Simulation D. Monahan, Quantemol Ltd., UK, J.C. Tennyson, University College London, UK |
| PS-TuP33 Development of ICP Etching Processes for Gallium Nitride HEMT S. Uehara, T. Nishimiya, Y. Kusuda, M. Hiramoto, S. Motoyama, O. Tsuji, SAMCO Inc., Japan |
| PS-TuP34 Study of the Substrate Heating in a Magnetron Sputtering Process J.S. Restrepo, University of Mexico, S. Muhl, J. Cruz, Universidad Nacional Autonoma de Mexico |