| 2:00pm |
PS-MoA1
Plasma Etching - The Early Days
J.W. Coburn, University of California at Berkeley |
| 2:20pm |
PS-MoA2 Invited Paper
Following Moore’s Law – How Many Knobs are Enough?
R.A. Gottscho, K. Smekalin, Lam Research |
| 3:00pm |
PS-MoA4
Real Time and 3D Characterization Techniques to Control Plasma Etch Processeses at the Nanometer Scale
O. Joubert, CEA/LETI-Minatec, France |
| 3:20pm |
PS-MoA5
Investigations of Plasma-Polymer Interactions For Nanoscale Patterning of Materials1,2
G.S. Oehrlein, University of Maryland |
| 4:00pm |
PS-MoA7
Will Recombination Reaction Probabilities at Plasma Chamber Walls Ever Be Non-Adjustable Parameters?
V.M. Donnelly, University of Houston |
| 4:20pm |
PS-MoA8
Ion-Surface Interactions Beyond Etching
K.P. Giapis, California Institute of Technology |
| 4:40pm |
PS-MoA9
Can Plasma Modeling Be a Predictive Tool in Process Development?: Etching of Very High Aspect Ratio Features and Gate Stacks
M. Wang, Y. Yang, J. Shoeb, M.J. Kushner, Iowa State University |
| 5:00pm |
PS-MoA10
Predictive Etch Profile under Competition Among Deposition, Etching, and Charging on Dielectrics in a Low Temperature Plasma
T. Makabe, Keio University, Japan |
| 5:20pm |
PS-MoA11
Silicon Processing Technologies in Adjacent Spaces: Applications Beyond Information Technology
T. Dalton, IBM |