| AVS 55th International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM-WeM1 Spectroscopic Detection of Conduction Band Edge Defects in HfO2, Hf Si Oxynitride and Stacked Hf Si Oxynitride/HfO2 High-k Dielectrics: Extraction of Defect States from O K Edge NEXAS Spectra K.B. Chung, H. Seo, J.P. Long, G. Lucovsky, North Carolina State University |
| 8:20am | EM-WeM2 ARXPS Study of the Early Stages of the Formation of the HfO2/Si and HfO2/SiO2 Interfaces M.D. Morales-Acosta, A. Herrera-Gomez, Cinvestav-Unidad Queretaro, Mexico, F.S. Aguirre-Tostado, J. Kim, R.M. Wallace, The University of Texas at Dallas |
| 8:40am | EM-WeM3 Characterization of High-k Dielectric and Metal Gate Film Stack by AR-XPS G. Conti, Y. Uritsky, C. Lazik, S. Hung, N. Yoshida, M. Agustin, X. Tang, R. Wang, Applied Materials Inc. |
| 9:00am | EM-WeM4 Density-Functional Theory Molecular Dynamics Simulations of a-Al2O3/Ge(100)(2x1), a-Al2O3/In0.5Ga0.5As, a-Al2O3/In0.5Al0.5As/In0.5Ga0.5As E. Chagarov, A.C. Kummel, University of California, San Diego |
| 9:20am | EM-WeM5 Atomic Layer Deposition (ALD) of Amorphous High-k Dielectric Films of La(1-x)MxO3/2, M = Al, Sc, Lu, Y and La H. Wang, M. Coulter, Y. Liu, J.J. Wang, R.G. Gordon, Harvard University, J.S. Lehn, H. Li, D.V. Shenai, Rohm and Haas Electronic Materials |
| 9:40am | EM-WeM6 Boron Oxynitride as Gate Dielectric Films for Future CMOS Technology N. Badi, S. Vijayaraghavan, A. Bensaoula, University of Houston, A. Tempez, P. Chapon, Horiba Jobin Yvon, France, N. Tuccitto, A. Licciardello, University of Catania, Italy |
| 10:40am | EM-WeM9 Invited Paper Electrical and Physical Properties of High-k Gate Dielectrics on III-V Semiconductors E.M. Vogel, C.L. Hinkle, A. Sonnet, F.S. Aguirre-Tostado, M. Milojevic, K.J. Choi, H.C. Kim, J.G. Wang, H.C. Floresca, J. Kim, M.J. Kim, R.M. Wallace, The University of Texas at Dallas |
| 11:20am | EM-WeM11 Surface Structure and Fermi Level Determination of Oxides/III-V Interface J. Shen, A.C. Kummel, University of California, San Diego |
| 11:40am | EM-WeM12 High-K Dielectrics/High Mobility Channel Interface Optimization for Future CMOS Technology L. Yu, T. Feng, Q. Jiang, H.D. Lee, C.L. Hsueh, A.S. Wan, D.D.T. Mastrogiovanni, Y. Xu, T. Gustafsson, E. Garfunkel, Rutgers, The State University of New Jersey |