| AVS 55th International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
| Session EM-WeM |
| Session: | High-K Oxides and High Mobility Substrates |
| Presenter: | H. Wang, Harvard University |
| Authors: | H. Wang, Harvard University M. Coulter, Harvard University Y. Liu, Harvard University J.J. Wang, Harvard University R.G. Gordon, Harvard University J.S. Lehn, Rohm and Haas Electronic Materials H. Li, Rohm and Haas Electronic Materials D.V. Shenai, Rohm and Haas Electronic Materials |
| Correspondent: | Click to Email |
ALD was used to deposit films containing lanthanum and other trivalent elements aluminum, scandium, lutetium and yttrium. The precursors are N,N’-dialkylformamidinates or acetamidinates, except for aluminum, for which trimethylaluminum was used. The oxygen source was water vapor, which was sometimes supplemented with molecular oxygen to eliminate oxygen vacancies. Substrates used include silicon, germanium, gallium arsenide, ruthenium and titanium nitride. The films are amorphous as deposited, and have no interfacial layer between the dielectric an silicon. The films remain amorphous after rapid thermal annealing to temperatures as high as 1000 oC. High dielectric constants and very low leakage currents were measured. Dielectric constants remain the same even when the film thickness is reduced to ~ 5 nm, leading to EOT values < 1 nm with leakage currents < 10-3 A cm-2.