| AVS 55th International Symposium & Exhibition | |
| Electronic Materials and Processing | Wednesday Sessions |
| Session EM-WeM |
| Session: | High-K Oxides and High Mobility Substrates |
| Presenter: | E.M. Vogel, The University of Texas at Dallas |
| Authors: | E.M. Vogel, The University of Texas at Dallas C.L. Hinkle, The University of Texas at Dallas A. Sonnet, The University of Texas at Dallas F.S. Aguirre-Tostado, The University of Texas at Dallas M. Milojevic, The University of Texas at Dallas K.J. Choi, The University of Texas at Dallas H.C. Kim, The University of Texas at Dallas J.G. Wang, The University of Texas at Dallas H.C. Floresca, The University of Texas at Dallas J. Kim, The University of Texas at Dallas M.J. Kim, The University of Texas at Dallas R.M. Wallace, The University of Texas at Dallas |
| Correspondent: | Click to Email |
Because of a significantly higher electron mobility compared to silicon, III-V semiconductors (e.g. GaAs, InGaAs) with high-k gate dielectrics (e.g. Al2O3, HfO2) are being considered for future Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). However, device performance has been limited by high electrically active interfacial defect density. Various physical characterization techniques including monochromatic x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) are used to study the physical properties of atomic-layer-deposited Al2O3 and HfO2 dielectrics with various interlayers (e.g. silicon), precursors and surface treatments. Characterization and modeling of the electrical properties of MOS capacitors and MOSFETs is correlated to the details of the bonding arrangements and physical properties of the dielectric stacks. The results suggest that proper selection of interlayer, ALD precursors, and surface treatment can result in selective interfacial bonding arrangements and associated device electrical properties.