| AVS 66th International Symposium & Exhibition | |
| Thin Films Division | Friday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | TF-FrM1 Invited Paper Incorporation Mechanisms and Electronic Properties of Impurities in Wide-Band-Gap Semiconductors John (Jack) Lyons, S.C. Erwin, U.S. Naval Research Laboratory |
| 9:00am | TF-FrM3 Review and Demonstration of Feature Scale Simulations Paul Moroz, TEL Technology Center, America, LLC |
| 9:20am | TF-FrM4 Process Optimization in Atomic Layer Deposition Using Machine Learning A. Yanguas-Gil, S. Letourneau, A.U. Mane, Noah Paulson, A.N. Lancaster, J.W. Elam, Argonne National Laboratory |
| 9:40am | TF-FrM5 Electroless Deposition of Cobalt Metal on a Palladium Layer on an Amine-modified Surface A. Ng, Anthony Muscat, University of Arizona |
| 10:00am | TF-FrM6 The Origins of Condensation-Driven Degradation of Hydrophobic Thin Films Jingcheng Ma, N.M. Miljkovic, University of Illinois at Urbana-Champaign |
| 10:20am | TF-FrM7 Structural and Electrical Properties of Sputtered HEA Thin Films of CrFeCoNiCu and their Oxidation Studies Jeyanthinath Mayandi, SMN, Department of Physics,University of Oslo, Norway, M. Stange, E. Sagvolden, M.F. Sunding, Ø. Dahl, SINTEF Materials and Chemistry, Norway, M. Schrade, SINTEF, Materials and Chemistry, Norway, J. Deuermeier, E.Fortunato. Fortunato, Universidade Nova de Lisboa, Portugal, O.M.Løvvik. Løvvik, S. Diplas, SINTEF Materials and Chemistry, Norway and University of Oslo, Norway, P.A. Carvalho, SINTEF Materials and Chemistry, Norway and Universidade de Lisboa, Portugal, T.G. Finstad, SMN, Department of Physics, University of Oslo, Norway |
| 10:40am | TF-FrM8 Observation of Topological Hall and Curie Temperature above Room Temperature in Strain-engineered FeGe Thin Films Adam Hauser, S. Budhathoki, K. Law, S. Ranjit, A. Sapkota, The University of Alabama, A. Thind, R. Mishra, Washington University in St. Louis, D. Heiman, Northeastern University, M.E. Jamer, United States Naval Acadamy, A. Borisevich, Oak Ridge National Laboratory, T. Mewes, The University of Alabama, J. Gallagher, U.S. Naval Research Laboratory |
| 11:00am | TF-FrM9 Infrared Absorption Oscillator Strength Factors in SiNx Thin Films Sara DiGregorio, S. Habermehl, Sandia National Laboratories |
| 11:20am | TF-FrM10 Computer Aided Molecular Design of novel precursor materials for Atomic Layer Deposition Mina Shahmohammadi, University of Illinois at Chicago, R. Mukherjee, Vishwamitra Research Institute, C.G. Takoudis, University of Illinois at Chicago, U.M. Diwekar, Vishwamitra Research Institute |
| 11:40am | TF-FrM11 The Use of Molecular Oxygen for a Low Cost and Low Temperature ALD of Amorphous Titania Harshdeep S. Bhatia, C.G. Takoudis, University of Illinois at Chicago |
| 12:00pm | TF-FrM12 Ultra-High Purity Process Capability for High-Performance Atomic layer Deposition Noel O’Toole, G.B. Rayner, Jr., Kurt J. Lesker Company, N.A. Strnad, General Technical Services, LLC, D.M. Potrepka, U.S. Army Research Laboratory |