AVS 66th International Symposium & Exhibition
    Plasma Science and Technology Division Tuesday Sessions

Session PS+EM-TuA
Advanced BEOL/Interconnect Etching and Advanced Memory and Patterning

Tuesday, October 22, 2019, 2:20 pm, Room B131
Moderators: Hisataka Hayashi, Kioxia Corporation, Japan, Kenji Maeda, Hitachi High Technologies America Inc.


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:20pm PS+EM-TuA1 Invited Paper
BEOL Etch Challenges and Solutions for Advanced Process Nodes
Angélique Raley, K. Lutker-Lee, X. Sun, Y.-T. Lu, Q. Lou, N. Joy, M. Edley, TEL Technology Center, America, LLC, K. Taniguchi, M. Honda, TEL Miyagi Limited, Japan, P.E. Biolsi, TEL Technology Center, America, LLC
3:00pm PS+EM-TuA3
Enabling Fully Aligned Via for Advanced BEOL Nodes Scaling -Etch and Film Co-optimization
Xinghua Sun, A. Raley, TEL Technology Center, America, LLC, J. Lee, J.C. Arnold, IBM Research Division, Albany, NY, K. Taniguchi, TEL Miyagi Limited, M. Edley, K. Lutker-Lee, TEL Technology Center, America, LLC, D. O'Meara, Tokyo Electron America, Inc., K. Tapily, Y.-T. Lu, P.E. Biolsi, TEL Technology Center, America, LLC
3:20pm PS+EM-TuA4
Non-selective Silicon Oxide and Nitride Etch in Oxygen/Nitrogen-containing Fluorocarbon Plasmas
Yu-Hao Tsai, D. Zhang, Y. Han, J. Baillargeon, Y. Shi, H. Kim, M. Wang, TEL Technology Center, America, LLC, T. Yokoyama, M. Iwata, Y. Kihara, M. Honda, W. Sakamoto, Tokyo Electron Miyagi Ltd., Japan, A. Mosden, A. Metz, P.E. Biolsi, TEL Technology Center, America, LLC
4:20pm PS+EM-TuA7 Invited Paper
Challenges in High-aspect-ratio Hole Etching for 3D Flash Memory
Mitsuhiro Omura, J. Hashimoto, T. Adachi, Y. Kondo, M. Ishikawa, J. Abe, I. Sakai, H. Hayashi, Kioxia Corporation, Japan
5:00pm PS+EM-TuA9
Plasma Processing of Phase Change Materials
Ernest Chen, N.D. Altieri, University of California, Los Angeles, C.M. Neumann, S.W. Fong, H.-S.P. Wong, Stanford University, M. Shen, T.B. Lill, Lam Research Corporation, J.P. Chang, University of California, Los Angeles
5:20pm PS+EM-TuA10 Invited Paper
Meeting the Challenges in Patterning Phase Change Material for Next Generation Memory Devices
Meihua Shen, L. Thorsten, J. Hoang, S. Chiou, D. Qian, A. Routzahn, J.K. Chen, A. Dulkin, J. Sims, A. McKerrow, R. Dylewicz, Lam Research Corporation
6:00pm PS+EM-TuA12
Utilizing Photosensitive Polymers to Estimate UV Radiation Exposures in Different Plasma Chamber Configurations
Luxherta Buzi, M.P. Sagianis, S.U. Engelmann, IBM T.J. Watson Research Center