AVS 66th International Symposium & Exhibition | |
Electronic Materials and Photonics Division | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | EM+2D+AP+NS+PS-TuM1 Invited Paper Performance Modeling and Design for Spintronic Logic and Memory Devices Azad Naeemi, Georgia Institute of Technology |
8:40am | EM+2D+AP+NS+PS-TuM3 High Yield, Low Variability HfO2 1T1R Cells Fabricated in 65nm CMOS J.H. Hazra, M.L. Liehr, K. Beckmann, Nathaniel C. Cady, SUNY Polytechnic Institute |
9:00am | EM+2D+AP+NS+PS-TuM4 Heat Transfer Proximity Effects in Resistive Memory Crossbar Arrays Marius Orlowski, M.S. Al-Mamun, Virginia Tech |
9:20am | EM+2D+AP+NS+PS-TuM5 High Performance Memristive Action in Methylammonium Bismuth Iodide([MA]3Bi2I9) Films P. Cheng, Vanderbilt University, G. Luo, Washington University in St. Louis, Z. Gao, University of Central Florida, A. Thind, R. Mishra, Washington University in St. Louis, Parag Banerjee, University of Central Florida |
9:40am | EM+2D+AP+NS+PS-TuM6 Mechanism of Chalcogen Passivation of GaAs Surfaces Takayuki Suga, S. Goto, UEC-Tokyo, Japan, A. Ohtake, NIMS, Japan, J.N. Nakamura, UEC-Tokyo, Japan |
11:00am | EM+2D+AP+NS+PS-TuM10 Invited Paper Combining 2D and 1D Atomic Scale Tailored Nanowire Surfaces for Novel Electronics and Photonics Anders Mikkelsen, Lund University, Sweden |
11:40am | EM+2D+AP+NS+PS-TuM12 Nanoflower Decorated GaN and AlGaN/GaN based Catalyst-free CO Sensors Monu Mishra, G. Gupta, National Physical Laboratory, India |
12:00pm | EM+2D+AP+NS+PS-TuM13 Surface Transfer Doping of Diamond by Complex Metal Oxides for Power Electronics: A Combined Experimental and Simulation Study Vihar Georgiev, A.J. Moran, A. McGhee, University of Glasgow, UK |