| AVS 66th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Tuesday Sessions |
| Session EM+2D+AP+NS+PS-TuM |
| Session: | New Devices and Materials for Electronics and Photonics |
| Presenter: | Nathaniel C. Cady, SUNY Polytechnic Institute |
| Authors: | J.H. Hazra, SUNY Polytechnic Institute M.L. Liehr, SUNY Polytechnic Institute K. Beckmann, SUNY Polytechnic Institute N.C. Cady, SUNY Polytechnic Institute |
| Correspondent: | Click to Email |
Hafnium Oxide (HfO2) based Resistive Random Access Memory (ReRAM) devices are promising candidates for non-volatile memory, having a wide variety of applications in neuromorphic computing, artificial intelligence and future memory solutions. Stochastic conductive filament (CF) generation and rupture processes, however, contribute to high variability resistive switching in these devices. In order to address this issue, an extensive characterization of HfO2 1 transistor 1 RRAM (1T1R) cells was performed to investigate switching yield and cell-to cell variability. 1T1R devices were integrated into a 300mm wafer platform utilizing the IBM 65nm 10LPe process technology, in which the memristor device stack is implemented between the M1 and M2 metallization layers, using a custom designed FEOL compatible process flow. The ReRAM device stack is comprised of a TiN bottom electrode followed by conformal deposition of the HfO2 switching layer, Ti oxygen scavenging layer and TiN top electrode. The HfO2 switching layer was deposited using an atomic layer deposition (ALD) process with an organic precursor. For statistical significance, the performance of 50 different 1T1R cells was compared for cell-to-cell variability in operating voltage and resistance in the on and off state. An impressive 100% switching yield and low cell-to-cell switching variability were observed for these devices. 1T1R cells were also investigated for long term endurance and high temperature retention, exhibiting excellent endurance of up to 1 billion switching cycles with an average Roff/Ron ratio of 10:1. As compared to 1T1R cells that we have fabricated with alternative ALD precursors/methods, these devices show superior yield and performance. We are currently performing compositional and structural comparisons between these sets of devices, to elucidate the impact of ALD precursor choice and processing methods on yield and electrical performance.