| AVS 66th International Symposium & Exhibition | |
| Electronic Materials and Photonics Division | Tuesday Sessions |
| Session EM+2D+AP+NS+PS-TuM |
| Session: | New Devices and Materials for Electronics and Photonics |
| Presenter: | Parag Banerjee, University of Central Florida |
| Authors: | P. Cheng, Vanderbilt University G. Luo, Washington University in St. Louis Z. Gao, University of Central Florida A. Thind, Washington University in St. Louis R. Mishra, Washington University in St. Louis P. Banerjee, University of Central Florida |
| Correspondent: | Click to Email |
BiI6 octahedra. This talk focuses on the structure, composition and associated defect chemistry that is critical for memristive behavior in MBI films.
Memristors are formed by contacting MBI films with aluminum electrodes. The switching for a 200 nm film is observed at voltages ~ 0.5 V. High frequency performance of these memristors shows a peak ON/OFF ratio 2.4x105at 50 KHz. The ON state retention is maintained at 50C for > 106 seconds. Stable room temperature endurance is noted for up to 1000 cycles. Energy dispersive x-ray spectroscopy on planar memristor devices show that, postswitching,a detectable change in the I- concentration is observed closer to the anode side. Density-functional theory (DFT) calculations show low activation barrier for iodine migration in agreement with the experimental results. The DFT calculations also provide insights about the migration pathway and strategies to control this behavior.
From a synthesis perspective, MBI films can be deposited using solution as well as low temperature (< 200C), atmospheric CVD technique.2 The compounds are air stable. This family of ternary compounds offers a large compositional and structural tunability; unlike binary metal oxides commonly used for memristors. As opposed to recent 2D MoS2 based planar, tunneling RAM devices3, the vertical stack of the 2-terminal memristor bodes well for scalability. Thus, we propose that hybrid organic-inorganic thin films may offer strategic materials and design advantages together with seamless process integration into current Si-based devices.References:
1. Cheng, P., Thind, A., Gao, Z., Luo, G., Mishra, R., Banerjee, P., “High performance memristors from methylammonium bismuth iodide thin films”, Submitted.
2. Chen, X.; Myung, Y.; Thind, A. S.; Gao, Z.; Yin, B.; Shen, M.; Cho, S. B.; Cheng, P.; Sadtler, B.; Mishra, R.; Banerjee, P., “Atmospheric pressure chemical vapor deposition of methylammonium bismuth iodide thin films”, J. Mater. Chem. A, 2017, 5, 24728 - 24739.
3. Vu et al., “Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio”, Nat. Comm., 2016, DOI: 10.1038/ncomms12725.