| AVS 65th International Symposium & Exhibition | |
| Plasma Science and Technology Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS+EM+TF-ThM1 Invited Paper Precise Flux Control of Ions and Radicals using Electron Beam Generated Plasmas David Boris, U.S. Naval Research Laboratory |
| 8:40am | PS+EM+TF-ThM3 Demonstration of Self-limiting Nature and Selectivity Control in Annealing Procedures for Rapid Thermal-Cyclic ALE of W, TiN, and SiN Kazunori Shinoda, H. Kobayashi, Hitachi, Japan, N. Miyoshi, K. Kawamura, M. Izawa, Hitachi High-Technologies, Japan, K. Ishikawa, M. Hori, Nagoya University, Japan |
| 9:00am | PS+EM+TF-ThM4 Mechanisms for Atomic Layer Etching of Metal Films by the Formation of Beta-diketonate Metal Complexes Tomoko Ito, K. Karahashi, S. Hamaguchi, Osaka University, Japan |
| 9:20am | PS+EM+TF-ThM5 Invited Paper Thermal Atomic Layer Etching of Transition Metal Films Charles Winter, Wayne State University |
| 11:00am | PS+EM+TF-ThM10 Invited Paper Gas Cluster Ion Beam Etching under Organic Vapor for Atomic Layer Etching Noriaki Toyoda, University of Hyogo, Japan |
| 11:40am | PS+EM+TF-ThM12 Utilizing Chemical Structure of Hydrofluorocarbon Precursors to Achieve Ultra-High Selective Material Removal in Atomic Layer Etching Kang-Yi Lin, C. Li, University of Maryland, College Park, S.U. Engelmann, R.L. Bruce, E.A. Joseph, IBM Research Division, T.J. Watson Research Center, D. Metzler, IBM Research Division, Albany, NY, G.S. Oehrlein, University of Maryland, College Park |
| 12:00pm | PS+EM+TF-ThM13 Etch Selectivity Mechanisms of Implanted Over Pristine SiN Materials in NH3/NF3 Remote Plasma for Quasi Atomic Layer Etching with the Smart Etch Concept Vincent Renaud, E. Pargon, C. Petit-Etienne, LTM, Univ. Grenoble Alpes, CEA-LETI, France, J.-P. Barnes, N. Rochat, Cea, Leti, Minatec, France, L. Vallier, G. Cunge, O. Joubert, LTM, Univ. Grenoble Alpes, CEA-LETI, France |