AVS 63rd International Symposium & Exhibition
    Surface Science Wednesday Sessions

Session SS+AS+EM-WeA
Semiconductor Surfaces and Interfaces

Wednesday, November 9, 2016, 2:20 pm, Room 104D
Moderator: Andrew Gellman, Carnegie Mellon University


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:20pm SS+AS+EM-WeA1
Adsorption of Triethylenediamine on Si(100)-2×1 Surface via N-Si Dative Bonding and C-N Dissociation
Jing Zhao, M. Madachik, University of Delaware, K. O’Donnell, Curtin University, Australia, O. Warschkow, University of Sydney, Australia, L. Thomsen, Australian Synchrotron, Australia, G. Moore, S. Schofield, University College London, A.V. Teplyakov, University of Delaware
2:40pm SS+AS+EM-WeA2
Chemoselective Adsorption of Functionalized Cyclooctynes on Silicon
M. Reutzel, N. Munster, M.A. Lipponer, Philipps-Universität Marburg, Germany, C. Langer, Justus Liebig University Giessen, Germany, U. Hofer, U. Koert, Philipps-Universität Marburg, Germany, Michael Durr, Justus Liebig University Giessen, Germany
3:00pm SS+AS+EM-WeA3 Invited Paper
Compositions, Structures, and Electronic Properties of Grain Boundaries of Cu(InGa)Se2
Xudong Xiao, Chinese University of Hong Kong
4:20pm SS+AS+EM-WeA7
Thermal Self-limiting CVD Silicon and ALD Silicon Nitride Containing Control Layers on In0.53Ga0.47As(001)-(2x4), Si0.5Ge0.5(110), and Si0.7Ge0.3(001)
Steven Wolf, M. Edmonds, T. Kent, K. Sardashti, University of California at San Diego, M. Chang, J. Kachian, Applied Materials, R. Droopad, Texas State University, E. Chagarov, A.C. Kummel, University of California at San Diego
4:40pm SS+AS+EM-WeA8
Formation of Atomically Ordered and Chemically Selective Si-O-Ti Monolayer on Si0.5Ge0.5(110) for a MIS Structure via H2O2(g) Functionalization
SangWook Park, J.Y. Choi, University of California, San Diego, E. Chagarov, Univeristy of California, San Diego, B. Sahu, S. Siddiqui, GLOBALFOUNDRIES, N. Yoshida, J. Kachian, Applied Materials, A.C. Kummel, University of California, San Diego
5:00pm SS+AS+EM-WeA9
The Effect of Ultrasonic Treatment (UST) on the Defect Structure of the Si–SiO2 System
Daniel Kropman, T. Laas, Tallinn University, Estonia
5:20pm SS+AS+EM-WeA10
Adsorption of C60 Buckminster Fullerenes on a Carbon-free Hydrazine-modified Silicon Surface
Fei Gao, A.V. Teplyakov, University of Delaware
5:40pm SS+AS+EM-WeA11
Passivation of SiGe Surfaces with Aqueous Ammonium Sulfide
Stacy Heslop, A.J. Muscat, University of Arizona
6:00pm SS+AS+EM-WeA12
Novel Electrical Circuit Model for the Design of InGaAs/GaAs (001) Strained-Layer-Super-Lattice
Tedi Kujofsa, J.E. Ayers, University of Connecticut