| AVS 63rd International Symposium & Exhibition | |
| Surface Science | Wednesday Sessions |
| Session SS+AS+EM-WeA |
| Session: | Semiconductor Surfaces and Interfaces |
| Presenter: | Jing Zhao, University of Delaware |
| Authors: | J. Zhao, University of Delaware M. Madachik, University of Delaware K. O’Donnell, Curtin University, Australia O. Warschkow, University of Sydney, Australia L. Thomsen, Australian Synchrotron, Australia G. Moore, University College London S. Schofield, University College London A.V. Teplyakov, University of Delaware |
| Correspondent: | Click to Email |
The functionalization of silicon surfaces with thin layers of organic materials is an important area of studies with current and potential applications in microelectronics, catalysis, and bio-sensing. Triethylenediamine (also known as 1,4-diazabicyclo[2.2.2]octane, or DABCO) presents an interesting case study for silicon functionalization because of its symmetric structure with two x nitrogen atoms in tertiary amine configuration. Each of these atoms could potentially form a dative bond with a clean Si(100)-2x1 surface while the other may remain accessible for further modification. We applied infrared spectroscopy (MIR-FTIR), X-ray photoelectron spectroscopy (XPS), and temperature programmed desorption (TPD) supported by density functional theory calculations (DFT) to investigate the reaction mechanism of triethylendiamine with a clean Si(100)-2×1 surface, focusing specifically on dative bond formation and C-N dissociation.