AVS 63rd International Symposium & Exhibition | |
Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | PS1-ThM1 The role of the Singlet Metastables and Energy-dependent Secondary Electron Emission Yields in Capacitively Coupled Oxygen Discharges Jon Gudmundsson, H. Hannesdottir, University of Iceland |
8:20am | PS1-ThM2 A Computational Model for Magnetron Sputtering Devices using VSim James McGugan, C.D. Zhou, Tech-X Corp., J.D. Smith, Tech-X UK Ltd., C.M. Roark, A.Y. Pankin, P.H. Stoltz, Tech-X Corp. |
8:40am | PS1-ThM3 Three Dimensional Monte Carlo Simulation of Surface Charging on a Contact Hole during Pulsed Plasma Etching Yugo Osano, Y. Higuchi, Y. Nishizawa, Samsung R&D Institute Japan, M.H. Cha, Samsung Electronics, Republic of Korea, H. Kubotera, Samsung R&D Institute Japan, K.H. Lee, Samsung Electronics, Republic of Korea |
9:00am | PS1-ThM4 Characteristics of Capacitively Coupled Plasmas Excited by Tailored Voltage Waveforms Ankur Agarwal, S. Rauf, K.S. Collins, Applied Materials Inc. |
9:20am | PS1-ThM5 Multi-zone Equilibrium of ICP Discharge for Plasma Processing. Mechanism of Plasma Heating Vladimir Nagorny, Mattson Technology |
9:40am | PS1-ThM6 Characterization of Transients in Pulsed Capacitively Coupled Plasmas Wei Tian, A. Agarwal, S. Rauf, K.S. Collins, Applied Materials Inc. |
11:00am | PS1-ThM10 Invited Paper Modeling and Simulation of Nonequilibrium Atmospheric Pressure Plasma Flows Juan Trelles, University of Massachusetts Lowell |
11:40am | PS1-ThM12 Multiscale Approach for Deep Silicon Etching Simulation under Bosch Process using SF6 and C4F8 Plasma Chemistry Guillaume Le Dain, A. Rhallabi, Institut des Matériaux Jean Rouxel – Université de Nantes, France, M. Boufnichel, F. Roqueta, ST Microelectronics, France |
12:00pm | PS1-ThM13 Molecular Dynamics Simulation of Ni Etching by CO Plasmas Akito Kumamoto, N. Mauchamp, M. Isobe, K. Mizotani, H. Li, T. Ito, K. Karahashi, S. Hamaguchi, Osaka University, Japan |