AVS 63rd International Symposium & Exhibition
    Plasma Science and Technology Wednesday Sessions

Session PS-WeA
Atomic Layer Etching and Low Damage Processing

Wednesday, November 9, 2016, 2:20 pm, Room 104C
Moderator: Eric Joseph, IBM Research Division, T.J. Watson Research Center


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:20pm PS-WeA1
Plasma-Based Removal of Native Oxide Layers on Si and SiGe Substrates While Minimizing Surface Residues
D. Metzler, Chen Li, University of Maryland, College Park, C.S. Lai, E.A. Hudson, Lam Research Corporation, G.S. Oehrlein, University of Maryland, College Park
2:40pm PS-WeA2
Electrical Characterization of SiN Modified by Hydrogen and Helium Plasma for New Atomic Layer Etching Processes
Florentin Chambettaz, L. Vallier, O. Joubert, Univ. Grenoble Alpes, France
3:00pm PS-WeA3
Electron Beam Generated Plasmas Produced in Fluorine-Containing Gases
David Boris, G.M. Petrov, Tz.B. Petrova, S.C. Hernandez, S.G. Walton, Naval Research Laboratory
3:20pm PS-WeA4
Plasma-Enhanced Germanium Atomic Layer Etching (ALE)
Wenbing Yang, S. Tan, K. Kanarik, R. Arghavani, T.B. Lill, Y. Pan, Lam Research Corp.
4:20pm PS-WeA7 Invited Paper
Damage Monitoring of GaN Film for Material Processing
Daisuke Ogawa, Y. Banno, Y. Nakano, K. Nakamura, Chubu University, Japan
5:00pm PS-WeA9
Neutral Beam Etching of Germanium Microstructure for Ge Fin-FET Devices
E.T. Lee, Shuichi Noda, Tohoku University, Japan, W. Mizubayashi, K. Endo, AIST, S. Samukawa, Tohoku University, Japan
5:20pm PS-WeA10
Selective Trimming of Surface Oxygenated Groups through Vacuum Ultraviolet Light Irradiation in an Evacuated Environment
Ahmed Soliman, T. Utsunomiya, T. Ichii, Kyoto University, Japan, H. Sugimura, Kyoto University, Japan
5:40pm PS-WeA11
Transistor Performance Improvement Through Low-Damage Plasma-Enhanced ALD Metal Gates
Christopher Brennan, C. Neumann, S. Vitale, MIT Lincoln Laboratory
6:00pm PS-WeA12
In situ Optical Diagnostics during Atomic Layer Etching of SiO2 using Alternating Cycles of C4F8 and Ar Plasma
N. Leick, Ryan Gasvoda, Colorado School of Mines, A. van de Steeg, Eindhoven University of Technology, Netherlands, R.A. Ovanesyan, Colorado School of Mines, R. Bhowmick, E.A. Hudson, Lam Research Corporation, S. Agarwal, Colorado School of Mines