| AVS 63rd International Symposium & Exhibition | |
| Plasma Science and Technology | Wednesday Sessions |
| Session PS-WeA |
| Session: | Atomic Layer Etching and Low Damage Processing |
| Presenter: | David Boris, Naval Research Laboratory |
| Authors: | D.R. Boris, Naval Research Laboratory G.M. Petrov, Naval Research Laboratory Tz.B. Petrova, Naval Research Laboratory S.C. Hernandez, Naval Research Laboratory S.G. Walton, Naval Research Laboratory |
| Correspondent: | Click to Email |
Electron beam generated plasmas are characterized by high plasma density (>1010 cm-3), and very low electron temperatures (<1 eV) making them well-suited for next generation processing techniques where high fluxes of low energy ions are desirable. In addition, both modeling and optical emission spectroscopy indicate relatively low concentrations of radicals compared to discharges. In this work, we focus on the characteristics these plasmas in fluorine-containing chemistries (SF6, CxFy, etc.), due to their relevance to industrial etching applications. We discuss the electron density and temperature, electronegativity, excited F* atom emission, as well as ion flux and energy at adjacent surfaces for plasmas produced in Ar/SF6 Ar/F2 and Ar/CF4 mixtures, with particular attention paid to the influence of reactive gas concentration. These parameters are measured using Langmuir probes, optical emission spectroscopy, and energy-resolved mass spectrometry. The results are then compared with a one-dimensional, steady-state hydrodynamic model developed for electron beam generated plasmas produced in low pressure Ar-SF6 mixtures.