AVS 63rd International Symposium & Exhibition | |
Electronic Materials and Photonics | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | EM+NS+PS+SS+TF-MoM1 Invited Paper Development of AlGaN based UV Laser Diodes Ronny Kirste, Adroit Materials, B. Sakar, A. Franke, NCSU, J. Tweedie, Adroit Materials, Z. Bryan, I. Bryan, NCSU, S. Mita, Adroit Materials, R. Collazo, Z. Sitar, NCSU |
9:00am | EM+NS+PS+SS+TF-MoM3 Invited Paper Low-Temperature PA-ALD Growth Technology for Group III-Nitride Nano-heterostructures and their (Opto)Electronic Device Applications Necmi Biyikli, A. Haider, S. Kizir, P. Deminskyi, M. Yilmaz, S. Bolat, A. Celebioglu, A.K. Okyay, T. Uyar, Bilkent University, Turkey, F. Buyukserin, S. Altuntas, TOBB University of Economics and Technology, Turkey, I. Yilmaz, K. Khaled, Turgut Ozal University, Turkey |
9:40am | EM+NS+PS+SS+TF-MoM5 Structural Qualities of GaN Grown on AlN Buffer Layer by MEPA-MOCVD Daniel Seidlitz, I. Senevirathna, A. Fali, Y. Abate, N. Dietz, Georgia State University, A. Hoffmann, Technical University Berlin, Germany |
10:00am | EM+NS+PS+SS+TF-MoM6 Optical and Electrical Characteristics of Gamma-ray Irradiated AlGaN/GaN Heterostructures MinPrasad Khanal, B. Ozden, K. Kim, S. Uprety, V. Mirkhani, L. Shen, K. Yapabandara, A.C. Ahyi, M. Park, Auburn University |
10:40am | EM+NS+PS+SS+TF-MoM8 Invited Paper Seeded Regrowth for Production of AlN and GaN Substrates by HVPE Jacob Leach, K. Udwary, G. Dodson, K. Gentry, P. Quayle, T. Schneider, H. Splawn, K. Evans, Kyma Technologies, Inc. |