AVS 63rd International Symposium & Exhibition
    Electronic Materials and Photonics Monday Sessions

Session EM+NS+PS+SS+TF-MoM
Growth and Devices Technology of Group III-Nitrides

Monday, November 7, 2016, 8:20 am, Room 102A
Moderators: Nikolaus Dietz, Georgia State University, Shalini Gupta, Northrop Grumman ES


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am EM+NS+PS+SS+TF-MoM1 Invited Paper
Development of AlGaN based UV Laser Diodes
Ronny Kirste, Adroit Materials, B. Sakar, A. Franke, NCSU, J. Tweedie, Adroit Materials, Z. Bryan, I. Bryan, NCSU, S. Mita, Adroit Materials, R. Collazo, Z. Sitar, NCSU
9:00am EM+NS+PS+SS+TF-MoM3 Invited Paper
Low-Temperature PA-ALD Growth Technology for Group III-Nitride Nano-heterostructures and their (Opto)Electronic Device Applications
Necmi Biyikli, A. Haider, S. Kizir, P. Deminskyi, M. Yilmaz, S. Bolat, A. Celebioglu, A.K. Okyay, T. Uyar, Bilkent University, Turkey, F. Buyukserin, S. Altuntas, TOBB University of Economics and Technology, Turkey, I. Yilmaz, K. Khaled, Turgut Ozal University, Turkey
9:40am EM+NS+PS+SS+TF-MoM5
Structural Qualities of GaN Grown on AlN Buffer Layer by MEPA-MOCVD
Daniel Seidlitz, I. Senevirathna, A. Fali, Y. Abate, N. Dietz, Georgia State University, A. Hoffmann, Technical University Berlin, Germany
10:00am EM+NS+PS+SS+TF-MoM6
Optical and Electrical Characteristics of Gamma-ray Irradiated AlGaN/GaN Heterostructures
MinPrasad Khanal, B. Ozden, K. Kim, S. Uprety, V. Mirkhani, L. Shen, K. Yapabandara, A.C. Ahyi, M. Park, Auburn University
10:40am EM+NS+PS+SS+TF-MoM8 Invited Paper
Seeded Regrowth for Production of AlN and GaN Substrates by HVPE
Jacob Leach, K. Udwary, G. Dodson, K. Gentry, P. Quayle, T. Schneider, H. Splawn, K. Evans, Kyma Technologies, Inc.