| AVS 63rd International Symposium & Exhibition | |
| Electronic Materials and Photonics | Monday Sessions |
| Session EM+NS+PS+SS+TF-MoM |
| Session: | Growth and Devices Technology of Group III-Nitrides |
| Presenter: | Jacob Leach, Kyma Technologies, Inc. |
| Authors: | J. Leach, Kyma Technologies, Inc. K. Udwary, Kyma Technologies, Inc. G. Dodson, Kyma Technologies, Inc. K. Gentry, Kyma Technologies, Inc. P. Quayle, Kyma Technologies, Inc. T. Schneider, Kyma Technologies, Inc. H. Splawn, Kyma Technologies, Inc. K. Evans, Kyma Technologies, Inc. |
| Correspondent: | Click to Email |
Freestanding GaN and freestanding AlN remain the substrates of choice for the highest performing vertical high voltage switching devices (>1200V) and UV optoelectronics, respectively. However, the cost of these substrates remains high, availability remains low, and the crystalline quality of these substrates varies depending on the growth technique employed. In particular, the electrical quality of GaN substrates and the UV transparency of AlN substrates depend on the specific growth conditions utilized and it remains a challenge to maintain high crystalline quality while simultaneously realizing high electrical quality or UV transparency. We proposed the use of hydride vapor phase epitaxy (HVPE) as a cloning technique to replicate the high crystalline quality of existing solvothermally grown GaN or physical vapor transport (PVT) grown AlN substrates while maintaining high electrical and optical quality. In this talk, we report Kyma’s recent results in the use of the HVPE replication technique for realizing both AlN and GaN substrates.