AVS 63rd International Symposium & Exhibition
    Electronic Materials and Photonics Monday Sessions
       Session EM+NS+PS+SS+TF-MoM

Invited Paper EM+NS+PS+SS+TF-MoM3
Low-Temperature PA-ALD Growth Technology for Group III-Nitride Nano-heterostructures and their (Opto)Electronic Device Applications

Monday, November 7, 2016, 9:00 am, Room 102A

Session: Growth and Devices Technology of Group III-Nitrides
Presenter: Necmi Biyikli, Bilkent University, Turkey
Authors: N. Biyikli, Bilkent University, Turkey
A. Haider, Bilkent University, Turkey
S. Kizir, Bilkent University, Turkey
P. Deminskyi, Bilkent University, Turkey
M. Yilmaz, Bilkent University, Turkey
S. Bolat, Bilkent University, Turkey
A. Celebioglu, Bilkent University, Turkey
A.K. Okyay, Bilkent University, Turkey
T. Uyar, Bilkent University, Turkey
F. Buyukserin, TOBB University of Economics and Technology, Turkey
S. Altuntas, TOBB University of Economics and Technology, Turkey
I. Yilmaz, Turgut Ozal University, Turkey
K. Khaled, Turgut Ozal University, Turkey
Correspondent: Click to Email
Being initially developed for an entire different area of use, atomic layer deposition (ALD) became a widespread tool to grow functional films and conformal ultra-thin coatings for numerous applications. Based on self-limiting surface reactions, ALD enabled the low-temperature growth of various materials including dielectrics, semiconductors, and metals. Featuring the capability to deposit wafer-scale uniform semiconductor films at relatively low-temperatures with sub-monolayer thickness control and ultimate conformality makes ALD attractive for the semiconductor community. Towards this end, precursors and growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD techniques as well as plasma-assisted and radical-enhanced ALD techniques have been exploited to achieve decent film quality compatible with device applications.

In this presentation, we give an overview of our research efforts on plasma-assisted ALD-based nanoscale semiconductor research focusing on III-nitrides. We have combined our low-temperature thin-film growth recipes with various nanoscale templates and exploited the conformality feature of ALD technique to fabricate nitride nanostructures. Electrospun polymeric nanofibers have been used to produce flexible polymer/III-nitride core-shell structures which might be used for flexible optoelectronics. In addition, hollow-core multi-shell III-nitride nano-heterostructures are demonstrated as well. Anodized alumina (AAO) templates were utilized to fabricate large-area ordered III-nitride nanostructures including radial heterostructures. Extensive growth and fabrication recipe development and materials characterization details will be presented.

The synthesized III-nitride nanoscale semiconductor materials might find applications in a vast amount of applications including physical and chemical sensing, piezo-electric energy harvesting, photocatalysis, nanoscale and flexible (opto)electronics. As proof-of-principle device demonstrations, we have shown nanofibrous GaN/InN-based photocatalysis, GaN/InN-based chemical (gas) sensing, and nanoscale GaN-based UV photodetectors.