AVS 63rd International Symposium & Exhibition
    Electronic Materials and Photonics Tuesday Sessions

Session EM+MI+MN-TuA
New Materials and Devices for Emerging Memory Technologies

Tuesday, November 8, 2016, 2:20 pm, Room 102A
Moderators: Andy Antonelli, Nanometrics, Sean King, Intel Corporation


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:20pm EM+MI+MN-TuA1 Invited Paper
Emerging Processing Challenges for Advanced Memory Technologies
Bart Van Schravendijk, Lam Research
4:20pm EM+MI+MN-TuA7 Invited Paper
Resistance Change Memory and its Perspective toward 3D Integration
Yoshio Nishi, B. Magyari-Kope, Stanford University
5:00pm EM+MI+MN-TuA9 Invited Paper
Atomic Disorder As an Intrinsic Source of Variability in Filamentary Rram Devices – Ab Initio Investigations
Sergiu Clima, IMEC, Belgium, L. Goux, B. Govoreanu, M. Jurczak, G. Pourtois, A. Fantini, IMEC
5:40pm EM+MI+MN-TuA11
Reduction of Radiation Damage to HfOx-Based Resistive Random Access Memory using a Thin ALD HfOx Film
Kai-wen Hsu, T. Chang, University of Wisconsin-Madison, L. Zhao, Z. Wang, Stanford University, R. Agasie, T. Betthauser, J. Nickles, Z. Ma, J. Chang, University of Wisconsin-Madison, Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison
6:00pm EM+MI+MN-TuA12
Potential Dependent Resistance of Doped TiO2 Film Fabricated by Solgel Process: Perspective for Resistive Memory
R.R. Pandey, Jyotirmay Sharma, C. Kant, K. Saini, CSIR-National Physical Laboratory, India