AVS 63rd International Symposium & Exhibition | |
Electronic Materials and Photonics | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:20pm | EM+MI+MN-TuA1 Invited Paper Emerging Processing Challenges for Advanced Memory Technologies Bart Van Schravendijk, Lam Research |
4:20pm | EM+MI+MN-TuA7 Invited Paper Resistance Change Memory and its Perspective toward 3D Integration Yoshio Nishi, B. Magyari-Kope, Stanford University |
5:00pm | EM+MI+MN-TuA9 Invited Paper Atomic Disorder As an Intrinsic Source of Variability in Filamentary Rram Devices – Ab Initio Investigations Sergiu Clima, IMEC, Belgium, L. Goux, B. Govoreanu, M. Jurczak, G. Pourtois, A. Fantini, IMEC |
5:40pm | EM+MI+MN-TuA11 Reduction of Radiation Damage to HfOx-Based Resistive Random Access Memory using a Thin ALD HfOx Film Kai-wen Hsu, T. Chang, University of Wisconsin-Madison, L. Zhao, Z. Wang, Stanford University, R. Agasie, T. Betthauser, J. Nickles, Z. Ma, J. Chang, University of Wisconsin-Madison, Y. Nishi, Stanford University, J.L. Shohet, University of Wisconsin-Madison |
6:00pm | EM+MI+MN-TuA12 Potential Dependent Resistance of Doped TiO2 Film Fabricated by Solgel Process: Perspective for Resistive Memory R.R. Pandey, Jyotirmay Sharma, C. Kant, K. Saini, CSIR-National Physical Laboratory, India |