| AVS 63rd International Symposium & Exhibition | |
| Electronic Materials and Photonics | Tuesday Sessions |
| Session EM+MI+MN-TuA |
| Session: | New Materials and Devices for Emerging Memory Technologies |
| Presenter: | Yoshio Nishi, Stanford University |
| Authors: | Y. Nishi, Stanford University B. Magyari-Kope, Stanford University |
| Correspondent: | Click to Email |
As we face a situation in the next decade where further scaling of traditional CMOS based devices would not be cost effective from manufacturing issues such as superfine lithography/etching and device physics barriers. Thus non-traditional new materials and devices research have been instigated, which resulted in new principle based non-volatile memories. A short list of such newly emerging memory consists of resistance change memory ReRAM, phase change memory, PCRAM, spin based MRAM/STT RAM, depending upon desirable characteristics to implement.
Though resistance change phenomena in metal oxides have been recognized since early days, it is in the past few years when aggressive research for application as nonvolatile memory has taken off. Basic switching mechanism is formation and annihilation of conductive vacancy chain in the metal oxide sandwiched by two electrodes. Both atomistic and macroscopic models have been investigated. Role of electrode materials and switching oxide interfaces during memory operation have attracted strong attention, as it would imply not only memory characteristics but also device endurance and scalability. Further, development of this type of resistance change memory is toward vertical integration with multi-memory layers which could replace ultra-high density flash memory.
This talk will review progresses made for resistance change memories, covering fundamental physical mechanism, implementation of memory cells including scaling limit studies, and 3 dimensional integration of such devices.