| AVS 63rd International Symposium & Exhibition | |
| Electronic Materials and Photonics | Tuesday Sessions |
| Session EM+MI+MN-TuA |
| Session: | New Materials and Devices for Emerging Memory Technologies |
| Presenter: | Jyotirmay Sharma, CSIR-National Physical Laboratory, India |
| Authors: | R.R. Pandey, CSIR-National Physical Laboratory, India J. Sharma, CSIR-National Physical Laboratory, India C. Kant, CSIR-National Physical Laboratory, India K. Saini, CSIR-National Physical Laboratory, India |
| Correspondent: | Click to Email |
Fastest growth has been registered in the field of electronics. It is the only field which has transformed every corner of the society and every age of the civic society, from youngest child to elderly persons. The growth was outcome of the miniaturization of the basic active device in electronics. The journey started from few millimeter size around 1965 and now reached to few tense of nanometers. At the beginning of this journey, the new smaller size devices not only performed better to its predecessor but were cost effective also. As we reached below ~300nm, the production was no longer economic. At around few tense of nanometer size the device performance also affected and at this junction the need was felt to explore alternate working principles for the device to maintain growth of the field and continue to benefit the society. New devices such as SET, RTD, resistive memory, magnetic memory, spintronic etc. were studied. Working device size of less than ten nanometers is expected from this new class of devices. Here we report fabrication of titanium oxide based resistive memory device by solgel technique. Thin films of high quality doped and undoped titanium oxide were applied on cleaned FTO or Pt-FTO glass substrates by solgel dip process. We doped titanium oxide with aliovalent cations by suitable choice of doped cation salt. Sequence of undoped and doped layers of titanium oxide was altered in different devices. Final structure was completed by thermal evaporation of metal electrode for electrical connection.
A resistance change of 2-3 orders of magnitude was observed up to the maximum applied potential of ±3.0 volts. The resistance change has complex dependence on nature of the dopant, dopant concentration, electrode material and sequence of the doped and undoped layers. We tried to explore the resistance change behavior and remembrance of resistance on the basis of basic studies viz; XRD, XPS, SEM, etc. cyclic voltameteric studies were also carried out to understand the contact between electrode and TiO2 layer.