| AVS 62nd International Symposium & Exhibition | |
| Materials Characterization in the Semiconductor Industry Focus Topic | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | MC-TuM1 Invited Paper Expanding Roles of Materials Characterization and Metrology in Advancing Moore's Law Z. Ma, Ying Zhou, Intel Corporation |
| 8:40am | MC-TuM3 X-ray based Characterization of Strained SiGe on FinFETs Kriti Kohli, M.A. Smith, A. Madan, Z. Zhu, J.R. Holt, GLOBALFOUNDRIES, M. Klare, Revera |
| 9:00am | MC-TuM4 Atomic Scale Analysis by Atom Probe on 3D Semiconductor Structures Ajay Kumar Kambham, S. Shintri, D. Flatoff, P. van der Heide, Globalfoundries |
| 9:20am | MC-TuM5 Invited Paper Preparing and Characterizing Nanoscale Topological Insulators Kenneth Burch, Boston College |
| 11:00am | MC-TuM10 ”More than Moore”: Could Silicene Be the Future of Electronics? J. Avila, Ch. Chen, S. Lorcy, Maria Asensio, Synchrotron SOLEIL, France |
| 11:20am | MC-TuM11 Challenges in Measuring Strain in Nanoscale 3D FinFET Structures Anita Madan, GLOBALFOUNDRIES, S. Mochozuki, IBM Albany Nanotech Center, C. Murray, IBM, T. J. Watson Research Center, D. Cooper, CEA, LETI, MINATEC Campus, France, Y. Wang, W. Weng, T. Pinto, GLOBALFOUNDRIES |
| 11:40am | MC-TuM12 Invited Paper Strain Measurement using Electron Beam Techniques Jean-Luc Rouviere, CEA-University Grenoble Alps, France, N. Bernier, CEA, LETI, MINATEC Campus, France, D. Cooper, CEA-LETI, France |