| AVS 62nd International Symposium & Exhibition | |
| Materials Characterization in the Semiconductor Industry Focus Topic | Tuesday Sessions |
| Session MC-TuM |
| Session: | Characterization of 3D structures |
| Presenter: | Kriti Kohli, GLOBALFOUNDRIES |
| Authors: | K.K. Kohli, GLOBALFOUNDRIES M.A. Smith, GLOBALFOUNDRIES A. Madan, GLOBALFOUNDRIES Z. Zhu, GLOBALFOUNDRIES J.R. Holt, GLOBALFOUNDRIES M. Klare, Revera |
| Correspondent: | Click to Email |
The introduction of complex three-dimensional structures in device design presents challenges that require ever more sophisticated metrology with high accuracy and precision. One such example is the measurement of composition and thickness of epitaxially grown thin films on fins. Due to the preferential growth in the <111> plane of SiGe on fins, the film creates complex multi-faceted shapes on top of the fins. These 3D structures are challenging even for reference metrology to characterize due to the effects of shading and variability in geometrical area. The goal is to develop an inline metrology that measures composition and thickness of epitaxially grown SiGe directly on fins since blanket pads are no longer correlated to device performance. In this paper, we present a comprehensive characterization of a set of samples with varying geometry, thickness, strain and composition of SiGe films on fins using HRXRD, XPS, XRF and compare to reference metrology. With each technique, we have developed a methodology for measuring directly on 3D fins and compare the techniques to determine the most robust, precise and accurate metrology solution.