AVS 61st International Symposium & Exhibition | |
Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:00am | PS1-WeM1 Invited Paper Dosimetry Challenges for Plasma Doping and Ion Implantation Bo Vanderberg, L.M. Rubin, A.M. Ray, Axcelis Technologies, Inc. |
8:40am | PS1-WeM3 Invited Paper Ion Implantation Challenges and Applications for Future Memory Devices Allen McTeer, Micron Technology |
9:20am | PS1-WeM5 Invited Paper Challenges in Ion Implantation Joseph Olson, S. Chennadi, G. Gammel, N. Pradhan, F. Sinclair, S. Todorov, M. Welsch, R. White, Applied Materials, Varian Semiconductor Equipment |
11:00am | PS1-WeM10 Plasma Doping Process Monitoring Diagnostics Yuuki Kobayashi, Tokyo Electron Limited, Japan, P. Ventzek, Tokyo Electron America, Inc., K. Yamashita, S. Nishijima, M. Oka, H. Ueda, Y. Sugimoto, M. Horigome, T. Nozawa, Tokyo Electron Limited, Japan |
11:20am | PS1-WeM11 Control over the Ion Flux Obtained by Sawtooth-like Waveforms in Radiofrequency Capacitively Coupled Plasmas Bastien Bruneau, T. Novikova, T. Lafleur, J.-P. Booth, E.V. Johnson, Ecole Polytechnique, France |
11:40am | PS1-WeM12 Surface Roughening Mechanisms and Roughness Suppression during Si Etching in Inductively Coupled Cl2 Plasmas Nobuya Nakazaki, H. Matsumoto, K. Eriguchi, K. Ono, Kyoto University, Japan |
12:00pm | PS1-WeM13 Ion Induced Electron Emission from Semiconductors: An Investigation into Fermi Level and Surface Electric Field Effects David Urrabazo, M.J. Goeckner, L.J. Overzet, University of Texas at Dallas |