AVS 61st International Symposium & Exhibition
    Plasma Science and Technology Wednesday Sessions
       Session PS1-WeM

Invited Paper PS1-WeM5
Challenges in Ion Implantation

Wednesday, November 12, 2014, 9:20 am, Room 305

Session: Plasma Based Ion Implantation and Ion-Surface Interactions
Presenter: Joseph Olson, Applied Materials, Varian Semiconductor Equipment
Authors: J. Olson, Applied Materials, Varian Semiconductor Equipment
S. Chennadi, Applied Materials, Varian Semiconductor Equipment
G. Gammel, Applied Materials, Varian Semiconductor Equipment
N. Pradhan, Applied Materials, Varian Semiconductor Equipment
F. Sinclair, Applied Materials, Varian Semiconductor Equipment
S. Todorov, Applied Materials, Varian Semiconductor Equipment
M. Welsch, Applied Materials, Varian Semiconductor Equipment
R. White, Applied Materials, Varian Semiconductor Equipment
Correspondent: Click to Email
Requirements on commercial ion implantation equipment grow increasingly stringent as device nodes progress. In the face of these tightening requirements the implanter designer is faced with the challenge of designing and building apparatus to measure and control process properties and then to validate improved performance. Recent examples of this process in action are discussed. (1) Precise control of the incidence angles of ions on a substrate is required for accurate placement of dopant atoms. Development to meet this need lead to advanced measurement and control systems and a powerful new technique (the 2D V curve) that produces a map of incident angles over an entire 300 mm Si substrate. The 2D V curve is explained in detail. (2) The current density in beamline implantation has potential process consequences on microuniformity, substrate charging and amorphization. The development of a beam density measurement, beam size control system and validation by examination of implanted wafers is discussed.