| AVS 61st International Symposium & Exhibition | |
| Plasma Science and Technology | Wednesday Sessions |
| Session PS1-WeM |
| Session: | Plasma Based Ion Implantation and Ion-Surface Interactions |
| Presenter: | Yuuki Kobayashi, Tokyo Electron Limited, Japan |
| Authors: | Y. Kobayashi, Tokyo Electron Limited, Japan P. Ventzek, Tokyo Electron America, Inc. K. Yamashita, Tokyo Electron Limited, Japan S. Nishijima, Tokyo Electron Limited, Japan M. Oka, Tokyo Electron Limited, Japan H. Ueda, Tokyo Electron Limited, Japan Y. Sugimoto, Tokyo Electron Limited, Japan M. Horigome, Tokyo Electron Limited, Japan T. Nozawa, Tokyo Electron Limited, Japan |
| Correspondent: | Click to Email |
Plasma doping is an emerging technology for the doping of next generation topographic structures such as Fin-FET extensions. Typically a dopant precursor such as arsine in injected into a plasma source where the dopants are freed from the precursor and injected into a surface that is initially amorphized by the ion flux incident on the topographic structure. As the doping process is impacted by the precursor, ion and energy flux to the substrate, it is important to have diagnostics to measure these quantities. Knowing the dose as a function of the critical measureable plasma parameters allows a model to be developed for dose monitoring and control. The model need not be physically based but could also be statistical. The challenge is coming up with simple enough diagnostics that integrate in a non-contaminating way with the plasma. Independent measurement of plasma parameters is also important as a monitor of plasma source and process stability which also impact dose. We have developed a hybrid sensor set comprising of an in-situ current and optical emission (OES) monitors that are used to correlate with dose measurements corresponding to a radial line slot antenna plasma doping process. The in-situ current monitor enables measurement of plasma density and OES provides measurement of dopant radicals. Both monitoring methods, when used together, permit detection of previously immeasurable process drift affecting doping performance. In this presentation, we describe the sensors and typical results. The relationship between dose, plasma and optical measurements is discussed in terms of a descriptive model. A physical interpretation of the results is aided by simulations of the plasma for which we present summary results.