Invited Paper PS1-WeM3
Ion Implantation Challenges and Applications for Future Memory Devices

Wednesday, November 12, 2014, 8:40 am, Room 305

For many years memory manufacturers resisted the need to adopt implant steps that were considered mainstream in logic manufacturing in order to keep cost down. In the last few years this approach has had to change to address scaling issues. Pre-amorphization, carbon, germanium and indium implants have been adopted by most memory manufacturers for dopant profile and silicide growth control. At the same time, plasma doping was adopted to address productivity issues seen with high dose, low energy beamline implants. These changes reflect the realization that technology challenges and cost mitigation are becoming more divergent with shrinking geometries. The introduction of emerging and vertical memory devices is expanding the applications of both beamline and plasma doping techniques. This talk will discuss some of the new implant applications that could be introduced in upcoming memory devices to address process needs. This will include discussion and data review of applications related to stress control, implant damage, silicon cracking, high aspect ratio implants, hydrogenation, surface modification, dopant profile control and interface cleaning.