| AVS 61st International Symposium & Exhibition | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS-MoA1 Invited Paper Breaking Through Limits in Semiconductor Technology Chang-Jin Kang, Samsung Electronics, Republic of Korea |
| 2:40pm | PS-MoA3 Mechanism of Silicon Damage during N2/H2 Block Etching for FinFET CMOS Tamotsu Morimoto, Tokyo Electron Limited, Japan, H. Ohtake, Tokyo Electron America, Inc., T. Wanifuchi, Tokyo Electron Miyagi Limited, Japan |
| 3:40pm | PS-MoA6 Invited Paper Plasma Etch in the Era of Atomic Scale Fidelity Vahid Vahedi, J. Marks, Lam Research Corp |
| 4:20pm | PS-MoA8 Challenges of 3D NAND Staircase Patterning Process Hui Zhou, S. Srinivasan, J. Choi, A. Khan, L. Yu, Z. Yao, A. Agarwal, S. Rauf, Applied Materials Inc. |
| 4:40pm | PS-MoA9 Impact of the Addition of SiCl4 in a CH3F/O2/He Chemistry for the Nitride Spacer Etching of FDSOI 14 nm Technology C. Arvet, S. Lagrasta, Maxime Garcia Barros, STMicroelectronics, France, S. Barnola, N. Posseme, CEA, LETI, MINATEC Campus, France, F. Leverd, STMicroelectronics, France |
| 5:00pm | PS-MoA10 Hydrofluorocarbon Gases for Selective, Low-Damage, Silicon Nitride Etching James Royer, R. Gupta, V. Pallem, American Air Liquide |
| 5:20pm | PS-MoA11 Alternative Process for Thin Layer Etching: Application to Nitride Spacer Stopping on Silicon Germanium Nicolas Posseme, G. Santini, O. Pollet, C. Arvet, S. Barnola, CEA-LETI, France |