| AVS 61st International Symposium & Exhibition | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | EM+2D-TuA1 Invited Paper Time-resolved XPS of ALD Rainer Timm, Lund University, Sweden |
| 3:00pm | EM+2D-TuA3 GaSb Oxide Thermal Stability Studied by Dynamic-XPS Stephen McDonnell, B. Brennan, E. Bursa, University of Texas at Dallas, K. Winkler, P. Baumann, Omicron NanoTechnology, Germany, R.M. Wallace, University of Texas at Dallas |
| 3:20pm | EM+2D-TuA4 Combined Wet HF and Dry Atomic H Cleaning of SiGe followed by Passivation of the Clean Surface via H2O2(g) Dosing Sang Wook Park, T. Kaufman-Osborn, E.A. Chagarov, A.C. Kummel, University of California at San Diego |
| 4:20pm | EM+2D-TuA7 Interfacial and Electrical Study of Crystalline Oxidation Passivation for AlGaN/GaN HEMTs Xiaoye Qin, H. Dong, J.Y. Kim, R.M. Wallace, University of Texas at Dallas |
| 4:40pm | EM+2D-TuA8 Invited Paper Investigating Electrically Active Defects in High-k/InGaAs MOS System using MOS Capacitors and MOSFETs Paul Hurley, Tyndall National Institute, Ireland, V. Djara, IBM Research - Zurich, Switzerland, E. O'Connor, S. Monaghan, I.M. Povey, J. Lin, Tyndall National Institute, Ireland, M.A. Negara, Stanford University, B. Sheehan, K. Cherkaoui, Tyndall National Institute, Ireland |
| 5:20pm | EM+2D-TuA10 Invited Paper XPS Study of High-k Gate Stack and Interaction with Different Channel Materials and Metal Gate Malcolm Bevan, Applied Materials Inc. |
| 6:00pm | EM+2D-TuA12 Reliability of nc-CdSe Embedded ZrHfO High-k Dielectric Nonvolatile Memory – Temperature Effects Shumao Zhang, Y. Kuo, Texas A&M University |