AVS 61st International Symposium & Exhibition | |
2D Materials Focus Topic | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:20pm | 2D+AS+HI+MC+NS+PS+SP+SS-TuA1 Invited Paper Layer-Dependent Electronic and Physical Structure of 2D van der Waals Crystals Richard Osgood, Columbia University |
3:00pm | 2D+AS+HI+MC+NS+PS+SP+SS-TuA3 X-ray Photoemission and Electron Energy Loss Spectroscopy Investigation of the Band Gap and Band Alignment for h-BN and MoS2 Materials and Interfaces Benjamin French, J. Brockman, M. French, M. Kuhn, J.D. Bielefeld, S.W. King, Intel Corporation, E. Bersch, G. Bersuker, SEMATECH, J. DiStefano, Y.C. Lin, J.A. Robinson, Penn State University |
3:20pm | 2D+AS+HI+MC+NS+PS+SP+SS-TuA4 STM/STS Characterization of MoS2 Monolayers and Nanostructures A. Mills, C. Chen, Virginia Tech, Y. Yu, L. Cao, North Carolina State University, Chenggang Tao, Virginia Tech |
4:40pm | 2D+AS+HI+MC+NS+PS+SP+SS-TuA8 Surface Characterization of Metal Oxide Layers Grown on CVD Graphene and Spin Precession Measurements Akitomo Matsubayashi, University at Albany-SUNY, W. Nolting, University of Albany-SUNY, D. Sinha, University at Albany-SUNY, A. Jayanthinarasimham, J.U. Lee, University of Albany-SUNY, V.P. LaBella, University at Albany-SUNY |
5:00pm | 2D+AS+HI+MC+NS+PS+SP+SS-TuA9 Morphology of CVD-grown Hexagonal Boron Nitride on Cu Foils Karthik Sridhara, W.G. Cullen, University of Maryland, College Park, J.K. Hite, Naval Research Laboratory, M.S. Fuhrer, Monash University, Australia, D.K. Gaskill, B.N. Feigelson, Naval Research Laboratory |
5:20pm | 2D+AS+HI+MC+NS+PS+SP+SS-TuA10 Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) and Cu(111) by Chemical Vapor Deposition EngWen Ong, University at Albany-SUNY, Z.R. Robinson, U.S. Naval Research Laboratory, T.R. Mowll, P. Tyagi, University at Albany-SUNY, H. Geisler, SUNY College at Oneonta, C.A. Ventrice, Jr., University at Albany-SUNY |
5:40pm | 2D+AS+HI+MC+NS+PS+SP+SS-TuA11 Invited Paper Novel Materials Properties at Atomically Thin Limit Zhi-Xun Shen, Stanford University |