| AVS 61st International Symposium & Exhibition | |
| 2D Materials Focus Topic | Tuesday Sessions |
| Session 2D+AS+HI+MC+NS+PS+SP+SS-TuA |
| Session: | 2D Materials Characterization including Microscopy and Spectroscopy |
| Presenter: | Chenggang Tao, Virginia Tech |
| Authors: | A. Mills, Virginia Tech C. Chen, Virginia Tech Y. Yu, North Carolina State University L. Cao, North Carolina State University C. Tao, Virginia Tech |
| Correspondent: | Click to Email |
Atomically thin molybdenum disulfide (MoS2) and nanostructures have been the subject of intense research efforts for their fascinating properties and potential applications in future electronic and optical devices. Especially, monolayer MoS2, an atomically thin semiconductor with a direct band gap, as opposed to an indirect band gap in bulk MoS2, has been demonstrated as field effect transistors, optoelectronic devices and chemical sensors. In our experimental study, Monolayer MoS2 and MoS2 triangular nanostructures are synthesized through a self-limiting chemical vapor deposition (CVD) approach. The precursor materials, MoCl5 and sulfur, react at high temperatures to produce MoS2 species and subsequently precipitate onto substrates to yield MoS2 films and triangular nanostructures. Using scanning tunneling microscopy (STM), we have investigated the structural and electronic properties of monolayer MoS2 grown on glassy carbon and triangular MoS2 nanostructures on highly ordered pyrolytic graphite (HOPG). We will also discuss our scanning tunneling spectroscopy (STS) measurements on these structures.