AVS 61st International Symposium & Exhibition
    2D Materials Focus Topic Tuesday Sessions
       Session 2D+AS+HI+MC+NS+PS+SP+SS-TuA

Paper 2D+AS+HI+MC+NS+PS+SP+SS-TuA3
X-ray Photoemission and Electron Energy Loss Spectroscopy Investigation of the Band Gap and Band Alignment for h-BN and MoS2 Materials and Interfaces

Tuesday, November 11, 2014, 3:00 pm, Room 310

Session: 2D Materials Characterization including Microscopy and Spectroscopy 
Presenter: Benjamin French, Intel Corporation
Authors: B. French, Intel Corporation
J. Brockman, Intel Corporation
M. French, Intel Corporation
M. Kuhn, Intel Corporation
J.D. Bielefeld, Intel Corporation
S.W. King, Intel Corporation
E. Bersch, SEMATECH
G. Bersuker, SEMATECH
J. DiStefano, Penn State University
Y.C. Lin, Penn State University
J.A. Robinson, Penn State University
Correspondent: Click to Email
Hexagonal boron nitride (h-BN) and molybdenum disulfide (MoS2) are two dimensional (2D) materials of significant interest for future nano-electronic devices. Due to a wide band gap (~ 6 eV), close lattice matching (< 2%) and atomic planarity, hexagonal boron nitride (h-BN) is of primary interest as a potential substrate and gate dielectric in graphene channel transistor devices. In contrast, MoS2 is a 2D semiconducting material with a band gap of ~ 1.8 eV that is attractive as a possible complement or alternative to graphene for nano-electronic devices requiring a large band gap. A key property for the success of both h-BN and MoS2 in such devices is the interfacial band alignment with graphene, the gate contact metallization and the surrounding insulating dielectric materials. In this regard, we have utilized x-ray photoelectron spectroscopy (XPS) to determine the Schottky barrier and valence band offsets present at the interfaces between plasma enhanced chemically vapor deposited amorphous h-BN:H and chemically vapor deposited MoS2. In combination, we have utilized reflection electron energy loss spectroscopy (REELS) to investigate the band gap of both h-BN and MoS2 materials to deduce the conduction band alignment. We show that in many instances the valence and conduction band offsets are significant and favorable for MoS2/h-BN transistor devices.