AVS 60th International Symposium and Exhibition
    Thin Film Wednesday Sessions

Session TF+VT-WeM
Thin Film Permeation Barriers and Encapsulation

Wednesday, October 30, 2013, 8:00 am, Room 104 A
Moderator: L.W. Rieth, University of Utah


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:00am TF+VT-WeM1
Tuning the Composition and Water Vapor Permeation Properties of the Silica-Like Films Deposited in Atmospheric Pressure High Current Dielectric Barrier Discharge
S.A. Starostin, H. de Vries, FUJIFILM Manufacturing Europe B.V, Netherlands, M. Creatore, Eindhoven University of Technology, Netherlands, M.C.M. van de Sanden, Dutch Institute for Fundamental Energy Research (DIFFER), Netherlands
8:20am TF+VT-WeM2
Measuring the Diffusion Coefficient of Water in High Quality Permeation Barrier Layers
B. Visweswaran, Princeton University, P. Mandlik, J. Silvernail, R. Ma, Universal Display Corporation, J.C. Sturm, S. Wagner, Princeton University
8:40am TF+VT-WeM3 Invited Paper
Improving the Reliability of Electronics Using ALD Barrier Films
S. Graham, H. Kim, A. Sharma, D. Samet, A. Bulusu, Georgia Institute of Technology
9:20am TF+VT-WeM5
Long-term Performance of Atomic Layer Deposited Al2O3 and Parylene Bi-layer Encapsulation for Utah Electrode Array Based Neural Interfaces
X. Xie, L.W. Rieth, F. Solzbacher, University of Utah
9:40am TF+VT-WeM6
On the Role of Nanoporosity in Moisture Permeation Barrier Layers
A. Perrotta, G. Aresta, W. Keuning, Eindhoven University of Technology, Netherlands, M.C.M. van de Sanden, Eindhoven University of Technology; DIFFER, Netherlands, W.M.M. Kessels, M. Creatore, Eindhoven University of Technology, Netherlands
10:40am TF+VT-WeM9
Atomic Density and Nano-Porosity Thresholds for Nanoscale Low-k Moisture Diffusion Barrier Materials
S.W. King, E. Mays, J.D. Bielefeld, D. Jacob, B. Colvin, D. Vanleuven, J. Kelly, Intel Corporation, M. Liu, D. Dutta, D. Gidley, University of Michigan
11:20am TF+VT-WeM11
Low Stress Carbon Films as Gas Barrier Layers
J. Rowley, R.C. Davis, L. Pei, R.R. Vanfleet, Brigham Young University, S. Liddiard, M. Harker, J. Abbott, MOXTEK Incorporated
11:40am TF+VT-WeM12
The Effective Control of Surface Profile and Arc Discharge during Amorphous Carbon Layer Deposition Process
I.-S. Kim, J. Park, J.H. Lee, M.J. Kim, Y.B. Choi, H.-G. Kim, S.H. Lee, J.W. Hong, J.L. Lee, M.W. Kim, G. Choi, H.-K. Kang, E.S. Jung, Samsung Electronics Co., LTD., South Korea